VSC8601 Datasheet
Electrical Specifications
Table 76.
Recommended Operating Conditions (continued)
Parameter
Symbol
Minimum
Typical
Maximum Unit
Power supply voltage for VDDIOMICRO VDDIOMICRO
at 3.3 V
3.0
3.3
2.5
3.3
3.6
2.63
3.6
V
V
V
Power supply voltage for VDDIOMAC at
2.5 V
VDDIOMAC
2.37
3.0
Power supply voltage for VDDIOMAC at
3.3 V
VDDIOMAC
Power supply voltage for VDD33
Power supply voltage for VDDREG
Power supply voltage for VDD12
Power supply voltage for VDD12A
Operating temperature(1)
VDD33
VDDREG
VDD12
VDD12A
T
3.0
3.0
1.14
1.14
0
3.3
3.3
1.2
1.2
3.6
3.6
V
V
1.26
1.26
90
V
V
°C
1. Lower limit of specification is ambient temperature, and upper limit is case temperature.
5.5
Stress Ratings
This section contains the stress ratings for the VSC8601 device.
Warning Stresses listed in the following table may be applied to devices one at a time
without causing permanent damage. Functionality at or exceeding the values listed is
not implied. Exposure to these values for extended periods may affect device reliability.
Table 77.
Stress Ratings
Parameter
Symbol
VDDIOMICRO
VDDIOMAC
VDD33
Minimum Maximum Unit
DC input voltage on VDDIOMICRO supply pin
DC input voltage on VDDIOMAC supply pin
DC input voltage on VDD33 supply pin
DC input voltage on VDDREG supply pin
DC input voltage on VDD12 supply pin
DC input voltage on VDD12A supply pin
DC input voltage on JTAG pins, 5 V tolerant
DC input voltage on any non-supply pin
Storage temperature
–0.5
–0.5
–0.5
–0.5
–0.5
–0.5
–0.5
–0.5
–65
4.0
4.0
V
V
4.0
V
VDDREG
VDD12
4.0
V
1.5
V
VDD12A
1.5
V
VDD(5 V)
VDD(PIN)
TS
5.5
V
VDD + 0.5
150
V
oC
Electrostatic discharge voltage, charged device
model
VESD_CDM
–500
500
V
Electrostatic discharge voltage, human body
model
VESD_HBM
–1500
1500
V
Warning This device can be damaged by electrostatic discharge (ESD) voltage.
Vitesse recommends that all integrated circuits be handled with appropriate
precautions. Failure to observe proper handling and installation procedures may
adversely affect reliability of the device.
Revision 4.1
September 2009
Page 83
VITESSE [ VITESSE SEMICONDUCTOR CORPORATION ]
