VSC838-01
Datasheet
Table 8. Allowed High-Speed Output Terminations and Modes of Operation
(1)
(1)
VOD
VOCM
Type
Description
DRIVE_CTRL
VCC (HIGH)
GND (LOW)
VCC (HIGH)
GND (LOW)
VCC (HIGH)
GND (LOW)
VCC (HIGH)
TERM_CTRL
VCC (ON)
(mV) typ
500
(V) typ
2.0
2
3
4
5
6
7
8
AC-coupled to 100Ω differential termination
DC-coupled, terminated in 50Ω to VCC at far-end only
DC-coupled, terminated in 50Ω to VCC at far-end only
DC-coupled, source and far-end terminated in 50Ω to VCC
DC-coupled, source and far-end terminated in 50Ω to VCC
DC-coupled, 100Ω differential termination
DC-coupled, 100Ω differential termination
GND (OFF)
GND (OFF)
VCC (ON)
500
2.25
2.0
1000
250
2.375
2.25
2.25
2.0
VCC (ON)
500
VCC (ON)
250
VCC (ON)
500
1. Measured at output of VSC838-01, with V = 2.5V.
CC
Operating Conditions
Table 9. Recommended Operating Conditions
Symbol
Parameter
Min
Typ
0
Max
Unit
V
Condition
VEE
Power supply voltage
VCC, VCCP Power supply voltage
Operating temperature(1)
2.375
0
+2.5
2.625
+85
V
T
°C
1. Lower limit of specification is ambient temperature, and upper limit is case temperature.
Stress Ratings
Table 10. Absolute Maximum Ratings
Symbol
Parameter
Min
-0.5
-0.5
-0.5
-50
Max
Unit
V
Condition
VCC
Power supply voltage, potential to ground
Input voltage applied (LVTTL)
Input voltage applied (ECL)
+4.0
VCC + 1.0
VCC + 0.5
+50
V
V
IOUT
TS
Output current
mA
°C
V
Storage temperature
-65
+150
VESD
Electrostatic discharge voltage, human body model
-500
+500
Stresses listed under Absolute Maximum Ratings may be applied to devices one at a time without causing permanent damage. Functionality at or above the values
listed is not implied. Exposure to these values for extended periods may affect device reliability.
ELECTROSTATIC DISCHARGE
This device can be damaged by ESD. Vitesse recommends that all integrated circuits
be handled with appropriate precautions. Failure to observe proper handling and
installation procedures may adversely affect reliability of the device.
10 of 19
VMDS-10195 Revision 4.0
August 19, 2005
VITESSE [ VITESSE SEMICONDUCTOR CORPORATION ]
