VSC838-01
Datasheet
DC Characteristics
All characteristics are specified over the recommended operating conditions.
Table 3. Power Supply Requirements
Symbol
ICC
Parameter
Min
Typ
2286
6
Max
3771
9.90
Unit
mA
W
Condition
VCC supply current
PT
Total chip power (with ITERM = 0 and
back-terminations ON, high drive)
Max PT is with +5% supply,
+85°C case temperature and
high drive
Table 4. Control Port Input Levels (LVTTL/CMOS)
Symbol
VIH
Parameter
Min
1.7
0
Typ
Max
VCC + 1.0
0.8
Unit
V
Condition
Input HIGH voltage
Input LOW voltage
Input HIGH current
Input HIGH current
Input LOW current
Output HIGH voltage
Output LOW voltage
VOH with external pull-up
VOL with external pull-up
VIL
V
IIH_2.5V
IIH_3.3V
IIL
100
200
100
µA
µA
µA
V
When driven with 2.5V logic.
When driven with 3.3V logic.
VOH
VCC – 0.2
VCC
0.2
DC load <500µA
DC load <2mA
VOL
0
V
VOHPU
VOLPU
2.4
V
250Ω to 3.3V (5%)
250Ω to 3.3V (5%)
0.4
V
Table 5. Signal Input levels (high-speed signal path)
Symbol
VIN
Parameter
Input voltage amplitude1
Input common-mode voltage2
Min
150
Typ
Max
1100
Unit
mV
V
Condition
See Note 1
See Note 2
VICM
VCC – 0.7
VCC – 0.2
1. Mean peak-to-peak amplitude measurement of either true or complement of the differential signal.
2. V = V = 2.5V, V = 0V.
CC
CCP
EE
Table 6. Signal Output Levels (high-speed signal path) TERM_CTRL=ON, DRIVE_CTRL=HI
Symbol
VOUT
Parameter
Output differential voltage1, 2
Output common-mode voltage2, 3
Min
400
Typ
Max
600
Unit
mV
V
Condition
See Notes 1, 3
See Notes 2, 3
VOCM
VCC - 0.3
VCC - 0.2
1. Mean peak-to-peak amplitude measurement of either true or complement of the differential signal.
2. Terminated in 50Ω to V . This termination is used for testing the part, but other terminations are allowed. For more information, see
CC
Table 8, page 9.
3. V = V
= 2.5V, V = 0V.
EE
CC
CCP
8 of 19
VMDS-10195 Revision 4.0
August 19, 2005
VITESSE [ VITESSE SEMICONDUCTOR CORPORATION ]
