VSC8113
Data Sheet
Table 17. Recommended Operating Conditions
Symbol
Parameter
Min
Typ
Max
Unit
V
Condition
V
V
Power Supply Voltage
+3.3 ±5
DD
DDP
C
PECL I/O Power Supply Voltage
+3.3/+5 ±5
V
T
Case Temperature Range
Commerical: VSC8113QB
0
0
+70
+115
+85
°C
°C
°C
Ambient to Case
Ambient to Case
Ambient to Case
Extended: VSC8113QB1, VSC8113QB-03
Industrial: VSC8113QB2
-40
Table 18. Absolute Maximum Ratings
Symbol
Parameter
Min
-0.5
-0.5
Max
+4.0
+6.0
Unit
V
Condition
V
Power Supply Voltage, Potential to GND
PECL I/O Power Supply Voltage, Potential to GND
DC Input Voltage (PECL inputs)
DD
V
V
DDP
-0.5
V
V
DDP
+0.5
DC Input Voltage (TTL Inputs)
DC Output Voltage (TTL Outputs)
Output Current (TTL Outputs)
Output Current (PECL Outputs)
Case Temperature Under Bias
Storage Temperature
-0.5
-0.5
-50
-50
-55
-65
5.5
V
V
V
+0.5
DD
+50
+50
mA
mA
°C
°C
V
T
T
+125
+150
1500
C
S
V
ESD (Human Body Model)
ESD
Stresses listed under Absolute Maximum Ratings may be applied to devices one at a time without causing permanent damage. Functionality at or above the values
listed is not implied. Exposure to these values for extended periods may affect device reliability.
ELECTROSTATIC DISCHARGE
This device can be damaged by ESD. Vitesse recommends that all integrated circuits
be handled with appropriate precautions. Failure to observe proper handling and
installation procedures may adversely affect reliabiility of the device.
15 of 22
G52154, Rev 4.5
6/28/02
Confidential
VITESSE [ VITESSE SEMICONDUCTOR CORPORATION ]
