VITESSE
SEMICONDUCTOR CORPORATION
Data Sheet
1.25Gbits/sec
Gigabit Ethernet Transceiver
VSC7135
DC Characteristics (Over recommended operating conditions).
Parameters
Description
Min
Typ
Max
Units
Conditions
= -1.0 mA
2.4
—
—
—
—
V
V
V
Output HIGH voltage (TTL)
Output LOW voltage (TTL)
I
I
OH
OH
0.5
V
= +1.0 mA
OL
OL
TX Output differential peak-
to-peak voltage swing
75Ω to V – 2.0 V
(TX+ - TX-)
1
1
DD
1200
1200
400
—
—
—
2200
2200
3200
mVp-p
mVp-p
mVp-p
∆V
OUT75
TX Output differential peak-
to-peak voltage swing
50Ω to V – 2.0 V
DD
∆V
OUT50
(TX+ - TX-)
Receiver differential peak-to-
peak Input Sensitivity RX
Internally biased to Vdd/2
(RX+ - RX-)
1
∆V
IN
2.0
0
—
—
50
—
—
5.5
0.8
V
V
V
Input HIGH voltage (TTL)
Input LOW voltage (TTL)
Input HIGH current (TTL)
Input LOW current (TTL)
Supply voltage
IH
V
—
IL
—
500
-500
3.47
µA
µA
V
I
V
V
=2.4V
=0.5V
IH
IN
IN
—
I
IL
3.14
VDD
3.3V±5%
Outputs open,
VDD = VDD max
—
—
625
190
900
260
mW
mA
P
Power dissipation
Supply Current
D
Outputs open,
VDD = VDD max
I
DD
Note: (1) Refer to Application Note, AN-37, for differential measurement techniques.
Absolute Maximum Ratings (1)
Power Supply Voltage, (VDD)............................................................................................................ -0.5V to +4V
DC Input Voltage (PECL inputs) ............................................................................................-0.5V to VDD +0.5V
DC Input Voltage (TTL inputs)......................................................................................................... -0.5V to 5.5V
DC Output Voltage (TTL Outputs) ........................................................................................-0.5V to VDD + 0.5V
Output Current (TTL Outputs) ................................................................................................................ +/-50mA
Output Current (PECL Outputs)...............................................................................................................+/-50mA
Case Temperature Under Bias......................................................................................................... -55o to +125oC
Storage Temperature .................................................................................................................... -65oC to +150oC
Maximum Input ESD (Human Body Model) ..............................................................................................1500 V
Recommended Operating Conditions
Power Supply Voltage, (VDD)................................................................................................................+3.3V+5%
Operating Temperature Range ............................................................. 0oC Ambient to +95oC Case Temperature
Notes:
(1) CAUTION: Stresses listed under “Absolute Maximum Ratings” may be applied to devices one at a time without causing per-
manent damage. Functionality at or above the values listed is not implied. Exposure to these values for extended periods may
affect device reliability.
Page 8
VITESSE SEMICONDUCTOR CORPORATION
741 Calle Plano, Camarillo, CA 93012 • 805/388-3700 • FAX: 805/987-5896
G52146-0, Rev. 4.0
5/28/98
VITESSE [ VITESSE SEMICONDUCTOR CORPORATION ]
