VSC6134
Datasheet
4
Electrical Specifications
This section provides the DC characteristics, AC characteristics, recommended operating conditions,
and stress ratings for the VSC6134 device.
4.1
DC Characteristics
This section contains the DC specifications for the VSC6134 device.
4.1.1
LVTTL Characteristics
Table 430. LVTTL Characteristics
Symbol
Parameter
Minimum
Maximum
Unit
Condition
VOH
Output high voltage
2.4
VDDIOTTL1
VDDIOTTL2
V
VDDTTL = 3.3 V
IOH = –2 mA
VDDTTL = 2.5 V
2.0
0.0
I
OH = –2 mA
VOL
Output low voltage
Input high voltage
0.4
V
V
VDDTTL = 3.3 V
VDDTTL = 2.5 V
IOL = 2 mA
VIH
2.0
1.8
VDDTTL
VDDTTL = 3.3 V
VDDTTL = 2.5 V
VIL
Input low voltage
0.0
0.8
1.2
V
VDDTTL = 3.3 V
VDDTTL = 2.5 V
II
Input current
–0.25
μA
μA
(VIL = 0 V) (VIH = VDDTTL
)
Input current with pull-up element
–500 500
4.1.2
3.3 V LVTTL Driver Slew Rate
The following table contains the 3.3 V LVTTL driver slew rate.
Table 431. 3.3 V LVTTL Driver Slew Rate
Symbol
Parameter
Minimum Slew Rate
Maximum Slew Rate
Unit
TTslew
Slew rate(1)
2.7
5.1
mV/ps
1. Output PAD signal driving a 5-pF lumped capacitance load. Output PAD signal rise and fall times are measured
between 20% and 80% of VDDIOTTL1 and VDDIOTTL2
.
389 of 438
VMDS-10185 Revision 4.0
July 2006
VITESSE [ VITESSE SEMICONDUCTOR CORPORATION ]
