Si4532DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Source Drain Diode Forward Voltage
20
P CHANNEL
On Resistance vs. Gate to Source Voltage
0.5
I S – Source Current (A)
10
r DS(on)– On-Resistance (
W
)
0.4
0.3
I
D
= 2.5 A
0.2
T
J
= 150_C
T
J
= 25_C
0.1
1
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0
0
2
4
6
8
10
V
SD
– Source-to-Drain Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
0.8
Threshold Voltage
30
Single Pulse Power
0.6
25
V GS(th) Variance (V)
0.4
Power (W)
I
D
= 250
mA
0.2
20
15
0.0
10
–0.2
5
–0.4
–50
–25
0
25
50
75
100
125
150
0
0.01
0.1
1
Time (sec)
10
30
T
J
– Temperature (_C)
Normalized Thermal Transient Impedance, Junction to Ambient
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
Notes:
0.1
0.1
0.05
P
DM
t
1
t
2
1. Duty Cycle, D =
t
1
t
2
0.02
Single Pulse
0.01
10
–4
2. Per Unit Base = R
thJA
= 62.5_C/W
3. T
JM
– T
A
= P
DM
Z
thJA(t)
4. Surface Mounted
10
–3
10
–2
10
–1
1
10
30
Square Wave Pulse Duration (sec)
Vishay Siliconix, 2201 Laurelwood Road, Santa Clara, CA 95054
S
Phone (408)988-8000
S
FaxBack (408)970-5600
S
www.siliconix.com
S-56944—Rev. D, 23-Nov-93
Siliconix was formerly a division of TEMIC Semiconductors
3-6
VISHAY [ VISHAY TELEFUNKEN ]
