Si4532DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Source Drain Diode Forward Voltage
20
T
J
= 150_C
10
T
J
= 25_C
r DS(on)– On-Resistance (
W
)
0.16
N CHANNEL
On Resistance vs. Gate to Source Voltage
0.20
I S – Source Current (A)
0.12
I
D
= 3.9 A
0.08
0.04
0
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0
0
2
4
6
8
10
V
SD
– Source-to-Drain Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
0.4
0.2
–0.0
Threshold Voltage
I
D
= 250
mA
30
Single Pulse Power
25
V GS(th) Variance (V)
20
–0.2
–0.4
–0.6
–0.8
–1.0
–50
Power (W)
15
10
5
–25
0
25
50
75
100
125
150
0
0.01
0.1
1
Time (sec)
10
30
T
J
– Temperature (_C)
Normalized Thermal Transient Impedance, Junction to Ambient
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
Notes:
0.1
0.1
0.05
P
DM
t
1
t
2
1. Duty Cycle, D =
t
1
t
2
0.02
2. Per Unit Base = R
thJA
= 62.5_C/W
3. T
JM
– T
A
= P
DM
Z
thJA(t)
4. Surface Mounted
Single Pulse
0.01
10
–4
10
–3
10
–2
10
–1
1
10
30
Square Wave Pulse Duration (sec)
Vishay Siliconix, 2201 Laurelwood Road, Santa Clara, CA 95054
S
Phone (408)988-8000
S
FaxBack (408)970-5600
S
www.siliconix.com
S-56944—Rev. D, 23-Nov-93
Siliconix was formerly a division of TEMIC Semiconductors
3-4
VISHAY [ VISHAY TELEFUNKEN ]
