Si4532DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
20
V
GS
= 10 thru 6 V
5V
16
I D – Drain Current (A)
I D – Drain Current (A)
16
125_C
12
20
T
C
= –55_C
25_C
N CHANNEL
Transfer Characteristics
12
8
4V
8
4
3V
0
0
2
4
6
8
4
0
0
1
2
3
4
5
6
V
DS
– Drain-to-Source Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
On Resistance vs. Drain Current
0.20
750
Capacitance
r DS(on)– On-Resistance (
W
)
0.16
C – Capacitance (pF)
V
GS
= 4.5 V
0.12
600
C
iss
450
0.08
V
GS
= 10 V
0.04
300
C
oss
150
C
rss
0
0
4
8
12
16
20
0
0
5
10
15
20
25
30
I
D
– Drain Current (A)
V
DS
– Drain-to-Source Voltage (V)
10
V
DS
= 10 V
I
D
= 3.9 A
Gate Charge
2.0
On Resistance vs. Junction Temperature
V GS – Gate-to-Source Voltage (V)
r DS(on)– On-Resistance (
W
)
(Normalized)
8
1.6
V
GS
= 10 V
I
D
= 3.9 A
6
1.2
4
0.8
2
0
0
2
4
6
8
10
0.4
–50
–25
0
25
50
75
100
125
150
Q
g
– Total Gate Charge (nC)
T
J
– Junction Temperature (_C)
Vishay Siliconix, 2201 Laurelwood Road, Santa Clara, CA 95054
S
Phone (408)988-8000
S
FaxBack (408)970-5600
S
www.siliconix.com
S-56944—Rev. D, 23-Nov-93
Siliconix was formerly a division of TEMIC Semiconductors
3-3
VISHAY [ VISHAY TELEFUNKEN ]
