Si4532DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
20
V
GS
= 10, 9, 8, 7, 6 V
16
I D – Drain Current (A)
5V
12
I D – Drain Current (A)
16
25_C
12
125_C
8
20
T
C
= –55_C
P CHANNEL
Transfer Characteristics
8
4V
4
3V
0
0
2
4
6
8
4
0
0
1
2
3
4
5
6
7
V
DS
– Drain-to-Source Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
On Resistance vs. Drain Current
0.40
700
600
r DS(on)– On-Resistance (
W
)
0.32
C – Capacitance (pF)
500
400
300
Capacitance
C
iss
0.24
V
GS
= 4.5 V
0.16
V
GS
= 10 V
0.08
C
oss
200
100
C
rss
0
0
3
6
9
12
15
0
0
6
12
18
24
30
I
D
– Drain Current (A)
V
DS
– Drain-to-Source Voltage (V)
10
V
DS
= 10 V
I
D
= 2.5 A
V GS – Gate-to-Source Voltage (V)
Gate Charge
2.0
1.8
r DS(on)– On-Resistance (
W
)
(Normalized)
1.6
1.4
1.2
1.0
0.8
0.6
On Resistance vs. Junction Temperature
V
GS
= 10 V
I
D
= 2.5 A
8
6
4
2
0
0
2
4
6
8
10
0.4
–50
–25
0
25
50
75
100
125
150
Q
g
– Total Gate Charge (nC)
T
J
– Junction Temperature (_C)
Vishay Siliconix, 2201 Laurelwood Road, Santa Clara, CA 95054
S
Phone (408)988-8000
S
FaxBack (408)970-5600
S
www.siliconix.com
S-56944—Rev. D, 23-Nov-93
Siliconix was formerly a division of TEMIC Semiconductors
3-5
VISHAY [ VISHAY TELEFUNKEN ]
