Si4532DY
Vishay Siliconix
SPECIFICATIONS (T
J
= 25_C UNLESS OTHERWISE NOTED)
PARAMETER
STATIC
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250
mA
V
DS
= V
GS
, I
D
= –250
mA
V
DS
= 0 V V
GS
=
"20
V
V,
V
DS
= 30 V, V
GS
= 0 V
Zero Gate Voltage Drain Current
I
DSS
V
DS
= –30 V, V
GS
= 0 V
V
DS
= 30 V, V
GS
= 0 V, T
J
= 55_C
V
DS
= –30 V, V
GS
= 0 V, T
J
= 55_C
On-State Drain Current
B
I
D(on)
V
DS
w
5 V, V
GS
= 10 V
V
DS
w
–5 V, V
GS
= –10 V
V
GS
= 10 V, I
D
= 3.9 A
Drain Source On State
Drain-Source On-State Resistance
B
r
DS(on)
V
GS
= –10 V, I
D
= –2.5 A
V
GS
= 4.5 V, I
D
= 3.1 A
V
GS
= –4.5 V, I
D
= –1.8 A
Forward Transconductance
B
g
fs
V
DS
= 15 V, I
D
= 3.9 A
V
DS
= –15 V, I
D
= – 2.5 A
I
S
= 1.7 A, V
GS
= 0 V
I
S
= –1.7 A, V
GS
= 0 V
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
15
A
–15
0.043
0.066
0.075
0.125
7
S
5
0.8
–0.8
1.2
V
–1.2
0.065
0.085
0.095
0.19
W
1.0
V
–1.0
"100
"100
1
–1
25
–25
mA
nA
SYMBOL
TEST CONDITION
MIN
TYP
MAX
UNIT
Gate-Body Leakage
I
GSS
Diode Forward Voltage
B
DYNAMIC
A
V
SD
N-Ch
Total Gate Charge
Q
g
N Channel
N-Channel
V
DS
= 10 V, V
GS
= 10 V, I
D
= 3.9 A
P-Channel
V
DS
= –10 V, V
GS
= –10 V, I
D
= –2.5 A
10 V
10 V
25
Gate-Drain Charge
Q
gd
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
Turn-On Delay Time
t
d(on)
N-Channel
V
DD
= 10 V, R
L
= 10
W
I
D
^
1 A, V
GEN
= 10 V, R
G
= 6
W
P-Channel
V
DD
= –10 V, R
L
= 10
W
10 V
I
D
^
–1 A, V
GEN
= –10 V, R
G
= 6
W
,
,
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
Fall Time
Source-Drain
Reverse Recovery Time
t
f
I
F
= 1.7 A, di/dt = 100 A/ms
I
F
= –1.7 A, di/dt = 100 A/ms
P-Ch
N-Ch
P-Ch
9.8
8.7
2.1
15
15
nC
Gate-Source Charge
Q
gs
1.9
1.6
1.3
9
7
6
9
18
14
6
8
52
50
15
15
18
18
27
ns
27
15
15
80
80
Rise Time
t
r
Turn-Off Delay Time
t
d(off)
t
rr
Notes
A. Guaranteed by design, not subject to production testing.
B. Pulse test; pulse width
v
300
ms,
duty cycle
v
2%.
Vishay Siliconix, 2201 Laurelwood Road, Santa Clara, CA 95054
S
Phone (408)988-8000
S
FaxBack (408)970-5600
S
www.siliconix.com
S-56944—Rev. D, 23-Nov-93
Siliconix was formerly a division of TEMIC Semiconductors
3-2
VISHAY [ VISHAY TELEFUNKEN ]
