10-FZ12NMA040SH-M267F/ 10-PZ12NMA040SH-M267FY
datasheet
Half Bridge
Half Bridge IGBT and Neutral Point FWD
Figure 5
IGBT
Figure 6
IGBT
Typical switching energy losses
as a function of collector current
E = f(IC)
Typical switching energy losses
as a function of gate resistor
E = f(RG)
2,0
1,5
1,0
0,5
0,0
2,0
1,5
1,0
0,5
0,0
Eoff High T
Eoff High T
Eon High T
Eoff Low T
Eon High T
Eoff Low T
Eon Low T
Eon Low T
0
15
30
45
60
0
10
20
30
40
I
C (A)
R G ( Ω)
With an inductive load at
With an inductive load at
Tj =
Tj =
°C
V
°C
V
V
A
25/125
25/125
VCE
VGE
=
=
VCE
VGE
IC =
=
=
350
±15
8
350
±15
28
V
Rgon
Rgoff
=
=
ꢀ
ꢀ
8
Figure 7
FWD
Figure 8
FWD
Typical reverse recovery energy loss
as a function of collector current
Erec = f(Ic)
Typical reverse recovery energy loss
as a function of gate resistor
Erec = f(RG)
0,20
0,15
0,10
0,05
0,00
0,15
0,12
0,09
0,06
0,03
0
Erec High T
Erec High T
Erec Low T
Erec Low T
0
10
20
30
40
0
15
30
45
60
I C (A)
R G ( Ω)
With an inductive load at
With an inductive load at
Tj =
VCE
VGE
Tj =
VCE
VGE
IC =
25/125
350
±15
8
°C
V
25/125
350
°C
V
V
A
=
=
=
=
V
±15
Rgon
=
ꢀ
28
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Revision: 6
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