10-FZ12NMA040SH-M267F/ 10-PZ12NMA040SH-M267FY
datasheet
Half Bridge
Half Bridge IGBT and Neutral Point FWD
Figure 13
FWD
Figure 14
FWD
Typical reverse recovery charge as a
function of collector current
Qrr = f(IC)
Typical reverse recovery charge as a
function of IGBT turn on gate resistor
Qrr = f(Rgon
)
1,5
1,2
0,9
0,6
0,3
0,0
1,2
Qrr High T
0,9
0,6
0,3
Qrr High T
Qrr Low T
Qrr Low T
0,0
0
0
15
30
45
60
10
20
30
40
I C (A)
R gon ( Ω)
At
At
At
Tj =
VCE
VGE
Tj =
VR =
IF =
25/125
350
±15
8
°C
V
25/125
350
°C
V
A
V
=
=
V
28
Rgon
=
VGE =
ꢀ
±15
Figure 15
FWD
Figure 16
FWD
Typical reverse recovery current as a
function of collector current
IRRM = f(IC)
Typical reverse recovery current as a
function of IGBT turn on gate resistor
IRRM = f(Rgon
)
60
45
30
15
0
60
IRRM High T
45
30
15
IRRM Low T
IRRM High T
IRRM Low T
0
0
0
15
30
45
60
10
20
30
40
I
C (A)
R gon ( Ω)
At
At
Tj =
VCE
VGE
Tj =
VR =
IF =
25/125
350
±15
8
°C
V
25/125
°C
V
A
V
=
350
28
=
V
Rgon
=
VGE =
ꢀ
±15
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8
Revision: 6
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