10-FZ12NMA040SH-M267F/ 10-PZ12NMA040SH-M267FY
datasheet
Characteristic Values
Conditions
Value
Typ
Parameter
Symbol
Unit
Vr [V] or
VCE [V] or
IC [A] or
IF [A] or
VGE [V] or
VGS [V]
Tj
Min
Max
V
DS [V]
ID [A]
Half Bridge IGBT
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
5,2
1,7
5,6
6,4
2,4
VGE(th) VCE=VGE
Gate emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off current incl. Diode
Gate-emitter leakage current
Integrated Gate resistor
Turn-on delay time
0,0015
40
V
V
1,96
2,29
VCE(sat)
ICES
IGES
Rgint
td(on)
tr
15
0
0,005
120
1200
0
mA
nA
ꢀ
20
none
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
70
72
13
Rise time
15
ns
166
217
45
td(off)
tf
Turn-off delay time
Rgoff=8 ꢀ
Rgon=8 ꢀ
±15
350
28
Fall time
79
0,31
0,52
0,67
1,16
Eon
Turn-on energy loss per pulse
Turn-off energy loss per pulse
Input capacitance
mWs
pF
Eoff
Cies
Coss
Crss
QGate
2300
160
135
203
Output capacitance
f=1MHz
0
25
Tj=25°C
Tj=25°C
Reverse transfer capacitance
Gate charge
±15
960
40
nC
Thermal grease
thickness≤50um
λ = 1 W/mK
RthJH
Thermal resistance chip to heatsink per chip
0,89
K/W
Neutral Point FWD
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
2,28
1,74
2,71
100
VF
Ir
Diode forward voltage
30
28
V
µA
Reverse leakage current
Peak reverse recovery current
Reverse recovery time
600
350
32
41
18
IRRM
trr
A
ns
40
0,32
0,92
8818
3866
0,03
0,12
Qrr
Reverse recovered charge
Peak rate of fall of recovery current
Reverse recovered energy
Rgon=8 ꢀ
±15
µC
di(rec)max
/dt
A/µs
mWs
Erec
Thermal grease
thickness≤50um
λ = 1 W/mK
RthJH
Thermal resistance chip to heatsink per chip
1,98
K/W
copyright Vincotech
3
Revision: 6
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