10-FZ12NMA040SH-M267F/ 10-PZ12NMA040SH-M267FY
datasheet
Characteristic Values
Conditions
Value
Typ
Parameter
Symbol
Unit
Vr [V] or
VCE [V] or
IC [A] or
IF [A] or
VGE [V] or
VGS [V]
Tj
Min
Max
V
DS [V]
ID [A]
Neutral Point IGBT
Gate emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off incl diode
Gate-emitter leakage current
Integrated Gate resistor
Turn-on delay time
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
5,0
1,1
5,8
6,5
1,9
VGE(th) VCE=VGE
0,002
30
V
V
1,52
1,70
VCE(sat)
ICES
IGES
Rgint
td(on)
tr
15
0
0,0016
300
600
0
mA
nA
ꢀ
20
none
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
105
105
11
Rise time
16
ns
164
187
74
td(off)
tf
Turn-off delay time
Rgoff=8 ꢀ
Rgon=8 ꢀ
±15
350
28
Fall time
91
0,49
0,66
0,76
0,98
Eon
Turn-on energy loss per pulse
Turn-off energy loss per pulse
Input capacitance
mWs
pF
Eoff
Cies
Coss
Crss
QGate
1630
108
50
Output capacitance
f=1MHz
0
25
Tj=25°C
Tj=25°C
Reverse transfer capacitance
Gate charge
±15
480
30
165
nC
Thermal grease
thickness≤50um
λ = 1 W/mK
RthJH
Thermal resistance chip to heatsink per chip
1,68
K/W
Half Bridge FWD
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
2,28
2,39
2,71
60
VF
Ir
Diode forward voltage
15
28
V
ꢁA
Reverse leakage current
Peak reverse recovery current
Reverse recovery time
1200
350
41
44
44
110
1,47
2,73
5094
3534
0,35
0,71
IRRM
trr
A
ns
Qrr
Reverse recovered charge
Peak rate of fall of recovery current
Reverse recovery energy
Rgon=8 ꢀ
±15
µC
di(rec)max
/dt
A/µs
mWs
Erec
Thermal grease
thickness≤50um
λ = 1 W/mK
RthJH
Thermal resistance chip to heatsink per chip
2,27
K/W
Thermistor
Rated resistance
Deviation of R100
Power dissipation
Power dissipation constant
B-value
R
Tj=25°C
Tj=100°C
Tj=25°C
Tj=25°C
Tj=25°C
Tj=25°C
22000
ꢀ
%
∆R/R R100=1486ꢀ
-5
5
P
200
2
mW
mW/K
K
B(25/50)
Tol. ±3%
Tol. ±3%
3950
3996
B(25/100)
B-value
K
Vincotech NTC Reference
B
copyright Vincotech
4
Revision: 6
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