10-FZ12NMA040SH-M267F/ 10-PZ12NMA040SH-M267FY
datasheet
Half Bridge
Half Bridge IGBT and Neutral Point FWD
Figure 17
FWD
Figure 18
FWD
Typical rate of fall of forward
and reverse recovery current as a
function of collector current
dI0/dt,dIrec/dt = f(Ic)
Typical rate of fall of forward
and reverse recovery current as a
function of IGBT turn on gate resistor
dI0/dt,dIrec/dt = f(Rgon
)
12000
9000
6000
3000
0
15000
dIrec/dt T
dIo/dt T
dIrec/dt T
dI0/dt T
12000
9000
6000
3000
0
0
10
20
30
40
0
15
30
45
60
I C (A)
R gon ( Ω)
At
At
Tj =
VCE
VGE
Tj =
VR =
IF =
25/125
350
±15
8
°C
V
25/125
°C
V
A
V
=
=
350
28
V
Rgon
=
VGE =
ꢀ
±15
Figure 19
IGBT
Figure 20
FWD
IGBT transient thermal impedance
as a function of pulse width
ZthJH = f(tp)
FWD transient thermal impedance
as a function of pulse width
ZthJH = f(tp)
101
101
100
100
D = 0,5
0,2
D = 0,5
0,2
10-1
10-1
0,1
0,1
0,05
0,02
0,01
0,005
0.000
0,05
0,02
0,01
0,005
0.000
10-2
10-5
10-2
t p (s)
t p (s)
10-4
10-3
10-2
10-1
100
1012
10-5
10-4
10-3
10-2
10-1
100
1012
At
D =
At
tp / T
0,89
tp / T
1,98
D =
R
thJH
=
RthJH =
K/W
K/W
IGBT thermal model values
FWD thermal model values
R (C/W)
0,09
Tau (s)
1,1E+00
2,9E-01
9,1E-02
1,4E-02
9,2E-04
R (C/W)
0,07
Tau (s)
5,6E+00
1,2E+00
2,2E-01
7,6E-02
1,5E-02
2,8E-03
0,17
0,17
0,47
0,52
0,12
0,75
0,04
0,25
0,13
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Revision: 6
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