2N60
Power MOSFET
ꢀ
TYPICAL CHARACTERISTICS(Cont.)
Breakdown Voltage vs. Temperature
On-Resistance vs. Temperature
1.2
1.1
3.0
2.5
2.0
VGS=10V
ID=4.05A
VGS=10V
ID=250μA
1.0
1.5
1.0
0.9
0.8
0.5
0.0
-100 -50
0
50
100 150
200
200
-100 -50
0
50
100 150
Junction Temperature, TJ (℃)
Junction Temperature, TJ (℃)
Max. Safe Operating Area
Max. Drain Current vs. Case Temperature
2.0
Operation in This Area
is Limited by RDS(on)
101
1.5
1.0
100μs 10μs
1ms
10m
s
D
100
C
10-1
10-2
0.5
0.0
TC=25℃
TJ=125℃
Single Pulse
100
101
102
103
150
25
50
75
100
125
Case Temperature, TC (℃)
Drain-Source Voltage, VDS (V)
Thermal Response
D=0.5
100
θJC (t) =2.78℃/W Max.
Duty Factor, D=t1/t2
0.2
0.1
TJM -TC=PDM×θJC (t)
0.05
0.02
0.01
10-1
PDM
t1
t2
100
Square Wave Pulse Duration, t1 (s)
Single pulse
10-5 10-4
10-3
10-2
10-1
101
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