2N60
Power MOSFET
ꢀ
ABSOLUTE MAXIMUM RATINGS (TC = 25℃, unless otherwise specified)
PARAMETER
SYMBOL
VDSS
RATINGS
UNIT
V
Drain-Source Voltage
Gate-Source Voltage
600
±30
VGSS
V
Avalanche Current (Note 2)
IAR
2.0
A
TC = 25°C
2.0
A
Drain Current Continuous
ID
TC = 100°C
1.26
8.0
A
Drain Current Pulsed (Note 2)
Avalanche Energy
IDP
EAR
EAS
A
Repetitive(Note 2)
4.5
mJ
mJ
V/ns
W
Single Pulse(Note 3)
140
Peak Diode Recovery dv/dt (Note 4)
Total Power Dissipation
dv/dt
4.5
TC = 25°C
45
PD
Derate above 25°C
0.36
+150
-55 ~ +150
W/℃
℃
Junction Temperature
Storage Temperature
TJ
TSTG
℃
Note:1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature
3. L=64mH, IAS=2.0A, VDD=50V, RG=25 Ω, Starting TJ = 25°C
4. ISD≤ 2.4A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
ꢀ
THERMAL DATA
PARAMETER
PACKAGE
TO-251
TO-252
TO-220
TO-220F
TO-251
TO-252
TO-220
TO-220F
SYMBOL
RATINGS
UNIT
112
112
54
54
12
12
4
Thermal Resistance Junction-Ambient
Thermal Resistance Junction-Case
θJA
℃/W
θJc
4
ꢀ
ELECTRICAL CHARACTERISTICS (TJ =25℃, unless Otherwise specified.)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
Off Characteristics
Drain-Source Breakdown Voltage
BVDSS VGS = 0V, ID = 250µA
600
V
VDS = 600V, VGS = 0V
IDSS
10
µA
µA
nA
nA
Zero Gate Voltage Drain Current
VDS = 480V, TC = 125°C
100
100
-100
Forward
Reverse
VGS = 30V, VDS = 0V
IGSS
Gate-Body Leakage Current
VGS = -30V, VDS = 0V
Breakdown Voltage Temperature
Coefficient
△BVDSS
△TJ
/
ID = 250 µA
0.4
V/℃
On Characteristics
Gate Threshold Voltage
VGS(TH) VDS = VGS, ID = 250µA
RDS(ON) VGS = 10V, ID =1A
2.0
4.0
5
V
Ω
S
Static Drain-Source On-Resistance
Forward Transconductance
Dynamic Characteristics
Input Capacitance
3.8
gFS
VDS = 50V, ID = 1A (Note 1)
2.25
CISS
COSS
CRSS
270
40
5
350
50
7
pF
pF
pF
VDS =25V, VGS =0V, f =1MHz
Output Capacitance
Reverse Transfer Capacitance
UNISONIC TECHNOLOGIES CO., LTD
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QW-R502-053,E
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