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2N60 参数 Datasheet PDF下载

2N60图片预览
型号: 2N60
PDF下载: 下载PDF文件 查看货源
内容描述: 2安培, 600伏特N沟道MOSFET [2 Amps, 600 Volts N-CHANNEL MOSFET]
分类和应用:
文件页数/大小: 8 页 / 143 K
品牌: UTC [ Unisonic Technologies ]
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2N60  
Power MOSFET  
ABSOLUTE MAXIMUM RATINGS (TC = 25, unless otherwise specified)  
PARAMETER  
SYMBOL  
VDSS  
RATINGS  
UNIT  
V
Drain-Source Voltage  
Gate-Source Voltage  
600  
±30  
VGSS  
V
Avalanche Current (Note 2)  
IAR  
2.0  
A
TC = 25°C  
2.0  
A
Drain Current Continuous  
ID  
TC = 100°C  
1.26  
8.0  
A
Drain Current Pulsed (Note 2)  
Avalanche Energy  
IDP  
EAR  
EAS  
A
Repetitive(Note 2)  
4.5  
mJ  
mJ  
V/ns  
W
Single Pulse(Note 3)  
140  
Peak Diode Recovery dv/dt (Note 4)  
Total Power Dissipation  
dv/dt  
4.5  
TC = 25°C  
45  
PD  
Derate above 25°C  
0.36  
+150  
-55 ~ +150  
W/  
Junction Temperature  
Storage Temperature  
TJ  
TSTG  
Note:1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.  
Absolute maximum ratings are stress ratings only and functional device operation is not implied.  
2. Repetitive Rating: Pulse width limited by maximum junction temperature  
3. L=64mH, IAS=2.0A, VDD=50V, RG=25 , Starting TJ = 25°C  
4. ISD2.4A, di/dt 200A/µs, VDD BVDSS, Starting TJ = 25°C  
THERMAL DATA  
PARAMETER  
PACKAGE  
TO-251  
TO-252  
TO-220  
TO-220F  
TO-251  
TO-252  
TO-220  
TO-220F  
SYMBOL  
RATINGS  
UNIT  
112  
112  
54  
54  
12  
12  
4
Thermal Resistance Junction-Ambient  
Thermal Resistance Junction-Case  
θJA  
/W  
θJc  
4
ELECTRICAL CHARACTERISTICS (TJ =25, unless Otherwise specified.)  
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT  
Off Characteristics  
Drain-Source Breakdown Voltage  
BVDSS VGS = 0V, ID = 250µA  
600  
V
VDS = 600V, VGS = 0V  
IDSS  
10  
µA  
µA  
nA  
nA  
Zero Gate Voltage Drain Current  
VDS = 480V, TC = 125°C  
100  
100  
-100  
Forward  
Reverse  
VGS = 30V, VDS = 0V  
IGSS  
Gate-Body Leakage Current  
VGS = -30V, VDS = 0V  
Breakdown Voltage Temperature  
Coefficient  
BVDSS  
TJ  
/
ID = 250 µA  
0.4  
V/℃  
On Characteristics  
Gate Threshold Voltage  
VGS(TH) VDS = VGS, ID = 250µA  
RDS(ON) VGS = 10V, ID =1A  
2.0  
4.0  
5
V
S
Static Drain-Source On-Resistance  
Forward Transconductance  
Dynamic Characteristics  
Input Capacitance  
3.8  
gFS  
VDS = 50V, ID = 1A (Note 1)  
2.25  
CISS  
COSS  
CRSS  
270  
40  
5
350  
50  
7
pF  
pF  
pF  
VDS =25V, VGS =0V, f =1MHz  
Output Capacitance  
Reverse Transfer Capacitance  
UNISONIC TECHNOLOGIES CO., LTD  
2 of 8  
QW-R502-053,E  
www.unisonic.com.tw  
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