2N60
Power MOSFET
ꢀ
TYPICAL CHARACTERISTICS
On-Region Characteristics
Transfer Characteristics
V
GS
VDS=50V
250μs Pulse Test
Top: 15.0V
10 .0V
8 .0V
100
7 .0V
6 .5V
6 .0V
Bottorm :
5.5V
85℃
25℃
100
10-1
-20℃
250μs Pulse Test
TC=25℃
10-1
10-2
2
4
6
8
10
101
10-1
100
Gate-Source Voltage, VGS (V)
Drain-Source Voltage, VDS (V)
On-Resistance Variation vs. Drain Current and
Gate Voltage
Body Diode Forward Voltage Variationvs.
Source Current and Temperature
12
10
8
VGS=0V
250μs Pulse Test
TJ
=25℃
VGS=10V
VGS=20V
100
6
4
125℃
25℃
2
0
10-1
0
2
3
4
5
6
1
0.2 0.4
0.6 0.8 1.0 1.2 1.4 1.6
Source-Drain Voltage, VSD (V)
Drain Current, ID (A)
Gate Charge vs. Gate ChargeVoltage
VDS=120V
Capacitancevs. Drain-Source Voltage
500
400
300
200
100
0
12
10
C
iss=CGS+CGD
(CDS=shorted)
oss=CDS+CGD
Crss=CGD
C
VDS=300V
VDS=480V
Ciss
Coss
8
6
4
Crss
2
VGS=0V
f = 1MHz
ID=2.4A
0
10-1
100
101
2
0
4
6
8
1
0
Drain-Source Voltage, VDS (V)
Total Gate Charge, QG (nC)
UNISONIC TECHNOLOGIES CO., LTD
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QW-R502-053,E
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