CHA3092
Bias Conditions :
20-33GHz Medium Power Amplifier
Typical On wafer Power Measurements
Vd1,2,3,4 = 3.5 Volt, Vg1,2,3,4 = -0.15 Volt, Id = 300 mA.
On wafer Pin / Pout at 26 GHz
30
27
24
21
18
15
12
9
6
3
0
-3
-2
-1
0
1
2
3
4
5
Pin ( dBm )
On wafer Pin / Pout at 20 GHz
25
24
23
22
21
20
19
18
17
16
15
25
24
23
22
21
20
19
18
17
16
15
-3
-2
-1
0
1
2
3
4
5
Pin ( dBm )
30
27
24
21
18
15
12
9
6
3
0
Pout ( dBm )
Pout ( dBm )
P.A.E. ( % )
On wafer Pin / Pout at 22 GHz
25
24
23
22
21
20
19
18
17
16
15
-3
-2
-1
0
1
2
3
4
5
Pin ( dBm )
30
27
24
21
18
15
12
9
6
3
0
On wafer Pin / Pout at 28 GHz
25
24
23
22
21
20
19
18
17
16
15
-3
-2
-1
0
1
2
3
4
5
Pin ( dBm )
30
27
24
21
18
15
12
9
6
3
0
Pout ( dBm )
Pout ( dBm )
Notes :
1- Test conditions :
Vd1,2,3,4 = 3.5 Volt, Vg1,2,3,4 = -0.15 Volt.
2- Power measurements are typical
( solid lines ).
P.A.E. is representative of on wafer
measurements on a typical circuit
( Dotted lines ).
Ref. : DSCHA30920356 21-Dec.-00
P.A.E. ( % )
4/7
Specifications subject to change without notice
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
P.A.E. ( % )
P.A.E. ( % )
UMS [ UNITED MONOLITHIC SEMICONDUCTORS ]
