CHA3092
20-33GHz Medium Power Amplifier
GaAs Monolithic Microwave IC
Description
The CHA3092 is a high gain broadband four-
stage monolithic medium power amplifier. It is
designed for a wide range of applications, from
military
to
commercial
communication
systems. The backside of the chip is both RF
and DC grounds. This helps simplify the
assembly process.
A B.I.T. ( Build In Test ) monitors a DC voltage
that is representative of the microwave output
power.
The circuit is manufactured with a PM-HEMT
process, 0.25µm gate length, via holes through
the substrate, air bridges and electron beam
gate lithography.
It is available in chip form.
Vd1
Vd2,3,4
IN
DI
OUT
Vg1
Vg2
Vg3,4
Vdet
Typical on wafer measurements :
Main Features
■
Broadband performances : 20-33GHz
■
20dBm output power.
■
22dB
±1.0dB
gain
■
Very good broadband input matching
■
On chip output power level DC detector
■
Low DC power consumption, 300mA @ 3.5V
■
Chip size : 0.88 X 1.72 X 0.10 mm
Input Rloss : solid line & output Rloss : dash line.
Main Characteristics
Tamb. = 25°C
Symbol
Fop
G
P03
Id_
small signal
Parameter
Operating frequency range
Small signal gain
Output power at 3dB gain compression
Bias current
Min
20
20
20
Typ
22
23
300
Max
33
Unit
GHz
dB
dBm
400
mA
ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions !
Ref. :DSCHA30920356 21-Dec.-00
1/7
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
UMS [ UNITED MONOLITHIC SEMICONDUCTORS ]
