CHA3092
20-33GHz Medium Power Amplifier
Electrical Characteristics for Broadband Operation
Tamb = +25°C,
Vd1,2,3,4 = 3.5V recommended
Symbol
Fop
G
∆G
Is
P1dB
P03
IP3
PAE
VSWRin
VSWRout
NF
Vdet
Parameter
Operating frequency range (1)
Small signal gain (1)
Small signal gain flatness (1)
Reverse isolation (1)
Pulsed output power at 1dB compression (1)
Output power at 3dB gain compression
3 order intercept point
Power added efficiency at saturation
Input VSWR (1)
Output VSWR (1)
Noise figure
Detected voltage: at 26GHz @ Pout=20dBm (2)
rd
Min
20
20
Typ
Max
33
Unit
GHz
dB
dB
dB
dBm
dBm
dBm
%
22
±1.0
50
18
20
20
23
29
10
2.0:1
3.0:1
10.0
1
300
400
dB
V
mA
Id_
small signal
Bias current
(1) These values are representative for pulsed on-wafer measurements that are made without
bonding wires at the RF ports. In the case of a jig or a module CW mode operation, the typical
output power may be around 2dB less.
(2) Voltage across an external 10kOhm parallel resistor connected to the voltage detector pad.
Absolute Maximum Ratings
Tamb. = 25°C (1)
Symbol
Vds
Ids
Vgs
Vdg
Pin
Ta
Tstg
Parameter
Drain bias voltage_small signal (2)
Drain bias current_small signal
Gate bias voltage
Negative Drain Gate voltage (= Vds – Vgs)
Maximum continuous input power (2)
Maximum peak input power overdrive (3)
Operating temperature range
Storage temperature range
Values
4.0
400
-2 to +0.4
+5
+4
+15
-40 to +85
-55 to +155
Unit
V
mA
V
V
dBm
dBm
°C
°C
(1) Operation of this device above anyone of these parameters may cause permanent damage.
(2) 3.5V recommended for up to a max of 3dB gain compression.
(3) Duration < 1s.
Ref. : DSCHA30920356 21-Dec.-00
2/7
Specifications subject to change without notice
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
UMS [ UNITED MONOLITHIC SEMICONDUCTORS ]
