T1G3000532-SM
5W, 32V, 0.03 – 3.5 GHz, GaN RF Input-Matched Transistor
Absolute Maximum Ratings
Recommended Operating Conditions
Parameter
Value
Parameter
Drain Voltage (VD)
Value
32 V (Typ.)
Breakdown Voltage (BVDG
Gate Voltage Range (VG)
Drain Current (ID)
)
100 V
-50 to 0 V
0.6 A
Drain Quiescent Current (IDQ
Peak Drain Current ( ID)
Gate Voltage (VG)
)
25 mA (Typ.)
326 mA (Typ.)
-2.7 V (Typ.)
225 °C (Max)
7.05 W (Max)
9.1 W (Max)
Gate Current (IG)
-1.25 to 2.1 mA
7.5 W
Power Dissipation (PD)
Channel Temperature (TCH)
Power Dissipation, CW (PD)
RF Input Power, CW,
T = 25°C (PIN)
25 dBm
275 °C
Power Dissipation, Pulse (PD)
Channel Temperature (TCH)
Electrical specifications are measured at specified test conditions.
Specifications are not guaranteed over all recommended
operating conditions.
Mounting Temperature
(30 Seconds)
320 °C
Storage Temperature
-40 to 150 °C
Operation of this device outside the parameter ranges
given above may cause permanent damage. These are
stress ratings only, and functional operation of the device
at these conditions is not implied.
RF Characterization – Load Pull Performance at 1.0 GHz
Test conditions unless otherwise noted: TA = 25 °C, VD = 32 V, IDQ = 25 mA, Pulse: 100uS Pulse Width, 20% Duty Cycle
Symbol Parameter
GLIN
Min
Typical
16.5
Max
Units
dB
Linear Gain, Power Tuned
Output Power at 3 dB Gain Compression, Power
Tuned
P3dB
5.9
W
Power-Added Efficiency at 3 dB Gain
Compression, Efficiency Tuned
PAE3dB
G3dB
77.3
13.5
%
Gain at 3 dB Compression, Power Tuned
dB
RF Characterization – Load Pull Performance at 1.5 GHz
Test conditions unless otherwise noted: TA = 25 °C, VD = 32 V, IDQ = 25 mA, Pulse: 100uS Pulse Width, 20% Duty Cycle
Symbol Parameter
GLIN
Min
Typical
17.5
Max
Units
dB
Linear Gain, Power Tuned
Output Power at 3 dB Gain Compression, Power
Tuned
P3dB
5.5
W
Power-Added Efficiency at 3 dB Gain
Compression, Efficiency Tuned
PAE3dB
G3dB
70.5
14.5
%
Gain at 3 dB Compression, Power Tuned
dB
Datasheet: Rev 001- 06-13-14
Disclaimer: Subject to change without notice
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