QPD1025
1500 W, 65 V, 1.0 – 1.1 GHz, GaN RF Input-Matched Transistor
Typical Measured Performance – Load-Pull Drive-up 1, 2, 3
Notes:
1. Test Conditions: VD = 65 V, IDQ = 750 mA, 100 us Pulse Width, 10% Duty Cycle, Temp = 25°C.
2. The performance shown below is for only half of the device out of the two independent amplification paths.
3. See page 13 for load pull reference planes where the performance was measured.
Gain and PAE vs. Output Power
1.0 GHz - Efficiency Tuned
Gain and PAE vs. Output Power
1.0 GHz - Power Tuned
25
24
23
22
21
20
19
18
17
16
15
100
90
80
70
60
50
40
30
20
10
0
25
24
23
22
21
20
19
18
17
16
15
100
90
80
70
60
50
40
30
20
10
0
Gain
PAE
Gain
PAE
Zs-fo = 0.72-1.76i
Zs-2fo = 0.47+0.06i
Zs-3fo = 0.81+0.5i
Zl-fo = 2.31+0.392i
Zl-2fo = 0.79+0.69i
Zl-3fo = NaN
Zs-fo = 0.72-1.76i
Zs-2fo = 0.47+0.06i
Zs-3fo = 0.81+0.5i
Zl-fo = 2.863+2.045i
Zl-2fo = 0.79+0.69i
Zl-3fo = NaN
50 51 52 53 54 55 56 57 58 59 60
Output Power [dBm]
50 51 52 53 54 55 56 57 58 59 60
Output Power [dBm]
Gain and PAE vs. Output Power
1.1 GHz - Power Tuned
Gain and PAE vs. Output Power
1.1 GHz - Efficiency Tuned
25
100
25
100
Gain
PAE
Gain
PAE
24
23
22
21
20
19
18
17
16
15
90
80
70
60
50
40
30
20
10
0
24
23
22
21
20
19
18
17
16
15
90
80
70
60
50
40
30
20
10
0
Zs-fo = 0.94-2.29i
Zs-2fo = 0.47-0.06i
Zs-3fo = 0.52+0.8i
Zl-fo = 2.221+1.322i
Zl-2fo = 0.8+0.69i
Zl-3fo = NaN
Zs-fo = 0.94-2.29i
Zs-2fo = 0.47-0.06i
Zs-3fo = 0.52+0.8i
Zl-fo = 2.53+0.746i
Zl-2fo = 0.8+0.69i
Zl-3fo = NaN
50 51 52 53 54 55 56 57 58 59 60
Output Power [dBm]
50 51 52 53 54 55 56 57 58 59 60
Output Power [dBm]
Datasheet Rev. B │ Subject to change without notice
www.qorvo.com
- 6 of 18 -
TRIQUINT [ TRIQUINT SEMICONDUCTOR ]
