QPD1025
1500 W, 65 V, 1.0 – 1.1 GHz, GaN RF Input-Matched Transistor
RF Characterization – 1.0 – 1.1 GHz EVB Performance at 1.05 GHz 1
Parameter
Linear Gain, GLIN
Min
–
Typ
21.2
Max
–
–
Units
ꢁdB
Output Power at 3dB compression point, P3dB
–
1461
W
Drain Efficiency at 3dB compression point,
DEFF3dB
Gain at 3dB compression point, G3dB
–
–
73.2
18.2
–
–
%
dB
Notes:
1. VD = 65ꢁV, IDQ = 1.5ꢁA (combined), Temp = +25ꢁ°C, Pulse Width = 100 us, Duty Cycle = 10%
RF Characterization – Mismatch Ruggedness at 1.0 GHz 1, 2, 3
Symbol Parameter
dB Compression
Typical
VSWR
Impedance Mismatch Ruggedness
3
ꢁ10:1
Notes:
1. Test conditions unless otherwise noted: TA = 25 °C, VD = 65 V, IDQ = 1.5 A (combined)
2. Input drive power is determined at pulsed 3dB compression under matched condition at EVB output connector
3. Pulse: 100us, 10% Duty cycle
Datasheet Rev. B │ Subject to change without notice
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