QPD1025
1500 W, 65 V, 1.0 – 1.1 GHz, GaN RF Input-Matched Transistor
Measured Load-Pull Smith Charts 1, 2, 3
Notes:
1. Test Conditions: VD = 65 V, IDQ = 750 mA, 100 us Pulse Width, 10% Duty Cycle, Temp = 25°C.
2. The performance shown below is for only half of the device out of the two independent amplification paths.
3. See page 13 for load pull reference planes where the performance was measured.
1.1GHz, Load-pull
Zs(fo) = 0.94-2.29i
• Max Power is 59dBm
Zs(2fo) = 0.47-0.06i
Zs(3fo) = 0.52+0.8i
Zl(2fo) = 0.8+0.69i
Zl(3fo) = NaN
at Z = 2.53+0.746i
= -0.0655+0.1438i
• Max Gain is 20.4dB
at Z = 1.111+1.709i
= -0.2444+0.5171i
• Max PAE is 76.9%
at Z = 2.221+1.322i
= -0.08+0.2735i
20.1
19.6
19.1
18.6
18.1
73.9
71.9
17.6
75.9
69.9
67.9
65.9
63.9
57.5
57.7
57.9
58.1
58.3
58.5
58.7
58.9
Power
Gain
PAE
Zo = 3
3dB Compression Referenced to Peak Gain
Datasheet Rev. B │ Subject to change without notice
www.qorvo.com
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