QPD1025
1500 W, 65 V, 1.0 – 1.1 GHz, GaN RF Input-Matched Transistor
Thermal and Reliability Information – Pulsed1, 2, 3
Parameter
Conditions
Values Units
Thermal Resistance, FEA (θJC) (1) (3)
Peak Channel Temperature, FEA (TCH
Median Lifetime, FEA (TM) (1)
°C/W
0.12
85 °C Case
Pdiss = 518 W
Pulse: 100 us PW, 10% DC
(1)
(1)
(1)
(1)
151
)
)
)
)
°C
5.0E10
130 (2)
0.13
Hrs
°C
°C/W
°C
Peak Channel Temperature, IR (2)
Thermal Resistance, FEA (θJC) (1) (3)
Peak Channel Temperature, FEA (TCH
Median Lifetime, FEA (TM) (1)
Peak Channel Temperature, IR (2)
Thermal Resistance, FEA (θJC) (1) (3)
Peak Channel Temperature, FEA (TCH
Median Lifetime, FEA (TM) (1)
85 °C Case
Pdiss = 691 W
Pulse: 100 us PW, 10% DC
177
3.0E9
147 (2)
0.14
Hrs
°C
°C/W
°C
85 °C Case
Pdiss = 864 W
Pulse: 100 us PW, 10% DC
209
1.7E8
166 (2)
0.15
Hrs
°C
°C/W
°C
Peak Channel Temperature, IR (2)
Thermal Resistance, FEA (θJC) (1) (3)
Peak Channel Temperature, FEA (TCH
Median Lifetime, FEA (TM) (1)
85 °C Case
Pdiss = 1037 W
Pulse: 100 us PW, 10% DC
239
1.8E7
183 (2)
Hrs
°C
Peak Channel Temperature, IR (2)
Notes:
1. Finite Element Analysis (FEA) thermal values shall be used to determine performance and reliability.
Unless otherwise noted, all thermal references are FEA.
2. Infrared (IR) thermal values are for reference only and can not be used to determine performance or reliability.
3. Thermal resistance measured to backside of package.
Datasheet Rev. B │ Subject to change without notice
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TRIQUINT [ TRIQUINT SEMICONDUCTOR ]
