QPD1025
1500 W, 65 V, 1.0 – 1.1 GHz, GaN RF Input-Matched Transistor
Absolute Maximum Ratings 1, 2, 3
Recommended Operating Conditions 1, 2, 3, 4
Parameter
Min Typ Max Units
Parameter
Rating
Units
Operating Temp. Range
Drain Voltage Range, VD
Drain Bias Current, IDQ
−40 +25 +85
ꢁ°C
V
Breakdown Voltage,BVDG
Gate Voltage Range, VG
Drain Current, IDMAX
225
-7 to +2
142
V
V
–
+65 +70
1.5
A
A
4
Drain Current, ID
–
–
–
–
–
28
−2.8
–
–
A
Gate Current Range, IG
Power Dissipation, Pulsed,
See pg. 12
mA
3
Gate Voltage, VG
–
V
758
W
2
Channel Temperature (TCH)
Power Dissipation (PD) 2,4
Power Dissipation (PD), CW 2
Notes:
1. Electrical performance is measured under conditions noted
in the electrical specifications table. Specifications are not
guaranteed over all recommended operating conditions
2. Package base at 85 °C
250
685
496
°C
W
W
PDISS
3
–
RF Input Power, Pulsed, PIN
Channel Temperature, TCH
46.2
275
dBm
°C
–
Mounting Temperature
(30ꢀSeconds)
320ꢁ
°C
°C
Storage Temperature
Notes:
−65 to +150
3. To be adjusted to desired IDQ
4. Pulsed, 1000us PW, 20% DC
1. Operation of this device outside the parameter ranges
given above may cause permanent damage
2. Pulsed, 1000us PW, 20% DC, Package base at 85 °C
3. Pulsed, 100us PW, 10% DC, T = 25 °C
Measured Load Pull Performance – Power Tuned 1, 2
Parameter
Typical Values
Units
GHz
dBm
Frequency, F
1.0
1.1
Output Power at 3dB compression, P3dB
59.2
59.0
Power Added Efficiency at 3dB compression,
PAE3dB
Gain at 3dB compression, G3dB
Notes:
70.2
19.5
75.5
19.2
%
dB
1. Test conditions unless otherwise noted: TA = 25 °C, VD = 65 V, IDQ = 750 mA (half device)
2. Pulsed, 100 us Pulse Width, 10% Duty Cycle.
Measured Load Pull Performance – Efficiency Tuned 1, 2
Parameter
Typical Values
Units
GHz
dBm
Frequency, F
1.0
1.1
Output Power at 3dB compression, P3dB
57.7
58.3
Power Added Efficiency at 3dB compression,
PAE3dB
Gain at 3dB compression, G3dB
Notes:
78.5
19.9
76.9
19.6
%
dB
1. Test conditions unless otherwise noted: TA = 25 °C, VD = 65 V, IDQ = 750 mA (half device)
2. Pulsed, 100 us Pulse Width, 10% Duty Cycle.
Datasheet Rev. B │ Subject to change without notice
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