QPD1020
2.7 – 3.5 GHz, 50 V, 30 W GaN RF Input-Matched Transistor
Measured Load-Pull Smith Charts1, 2
Notes:
1. Test Conditions: VD = 50 V, IDQ = 52.5 mA, 100 uS Pulse Width, 20% Duty Cycle
2. See page 16 for load pull reference planes where the performance was measured.
3.5GHz, Load-pull
0
.
5
Zs(fo) = 35.39-14.88i
Zs(2fo) = 34.96-3.49i
Zl(2fo) = 6.31-8.63i
Ω
Max Power is 45dBm
at Z = 8.621+5.79i
•
Ω
Ω
Ω
= -0.5601+0.2149i
Max Gain is 17.4dB
Γ
•
at Z = 3.96+8.221i
Ω
= -0.5601+0.2149i
Max PAE is 65%
Γ
•
at Z = 6.471+10.165i
= -0.5731+0.4011i
Ω
Γ
17.3
16.8
64.1
54.1
56.1
58.1
15.8
15.3
44.5
44.7
44.9
14.8
Power
Gain
PAE
Zo = 33.4
Ω
Datasheet Rev. B, Sept. 18, 2017 | Subject to change without notice
www.qorvo.com
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TRIQUINT [ TRIQUINT SEMICONDUCTOR ]
