QPD1020
2.7 – 3.5 GHz, 50 V, 30 W GaN RF Input-Matched Transistor
Power Driveup Performance Over Temperatures Of 2.7 – 3.1 GHz EVB1
Notes:
1. Test Conditions: VD = 50 V, IDQ = 52.5 mA, 128 uS Pulse Width, 10% Duty Cycle
P3dB Over Temperatures
DEFF3dB Over Temperatures
40
35
30
25
20
15
10
5
80
75
70
65
60
55
50
45
40
35
30
-40 °C
25 °C
85 °C
-40 °C
25 °C
85 °C
0
2.7
2.75
2.8
2.85
2.9
2.95
3
3.05
3.1
2.7
2.75
2.8
2.85
2.9
2.95
3
3.05
3.1
Frequency [GHz]
Frequency [GHz]
G3dB Over Temperatures
Pdiss3dB Over Temperatures
20
19
18
17
16
15
14
13
12
11
10
9
40
35
30
25
20
15
10
5
-40 °C
25 °C
85 °C
-40 °C
25 °C
85 °C
8
0
2.7
2.75
2.8
2.85
2.9
2.95
3
3.05
3.1
2.7
2.75
2.8
2.85
2.9
2.95
3
3.05
3.1
Frequency [GHz]
Frequency [MHz]
Datasheet Rev. B, Sept. 18, 2017 | Subject to change without notice
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TRIQUINT [ TRIQUINT SEMICONDUCTOR ]
