QPD1020
2.7 – 3.5 GHz, 50 V, 30 W GaN RF Input-Matched Transistor
Absolute Maximum Ratings1
Recommended Operating Conditions1
Parameter
Min Typ Max Units
Parameter
Rating
Units
Operating Temp. Range
Drain Voltage Range, VD
Drain Bias Current, IDQ
−40 +25 +85
+32 +50 +55
52.5
ꢁ°C
V
Breakdown Voltage,BVDG
Gate Voltage Range, VG
Drain Current, IDMAX
+145
-7 to +2.0
4.1
V
V
mA
mA
V
A
4
Drain Current, ID
–
–
–
100
−2.8
–
–
–
Gate Current Range, IG
See page 15.
30
mA
W
3
Gate Voltage, VG
2
Power Dissipation, PDISS
Channel Temperature (TCH)
250
°C
RF Input Power, Pulse, 2.9
GHz, T = 25ꢀ°C2
+33
275
dBm
°C
Power Dissipation (PD),
Pulsed2,4
Power Dissipation (PD), CW2
–
–
–
–
27
W
W
Channel Temperature, TCH
18.5
Mounting Temperature
(30ꢀSeconds)
320ꢁ
°C
Notes:
1. Electrical performance is measured under conditions noted
in the electrical specifications table. Specifications are not
guaranteed over all recommended operating conditions.
2. Package base at 85 °C
3. To be adjusted to desired IDQ
4. 100uS PW, 20% DC
Storage Temperature
Notes:
−65 to +150
°C
1. Operation of this device outside the parameter ranges
given above may cause permanent damage.
2. Pulsed 100uS PW, 20% DC
Measured Load Pull Performance – Power Tuned1
Typical Values
Parameter
Units
GHz
V
Frequency, F
2.7
50
3.1
50
3.5
50
Drain Voltage, VD
Drain Bias Current, IDQ
52.5
52.5
52.5
mA
Output Power at 3dB
compression, P3dB
45.2
44.9
45
dBm
Power Added Efficiency at 3dB
compression, PAE3dB
55
14
53.7
15.4
56.7
15.4
%
Gain at 3dB compression, G3dB
Notes:
1. Pulsed, 100 uS Pulse Width, 20% Duty Cycle
dB
2. Characteristic Impedance, Zo = 33.4 Ω.
Measured Load Pull Performance – Efficiency Tuned1
Parameter
Typical Values
Units
GHz
V
Frequency, F
2.7
50
3.1
50
3.5
50
Drain Voltage, VD
Drain Bias Current, IDQ
52.5
52.5
52.5
mA
Output Power at 3dB
compression, P3dB
43.6
43.6
43.9
dBm
Power Added Efficiency at 3dB
compression, PAE3dB
66.5
16.5
64.0
17.5
65
%
Gain at 3dB compression, G3dB
Notes:
1. Pulsed, 100 uS Pulse Width, 20% Duty Cycle
16.3
dB
2. Characteristic Impedance, Zo = 33.4 Ω.
Datasheet Rev. B, Sept. 18, 2017 | Subject to change without notice
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TRIQUINT [ TRIQUINT SEMICONDUCTOR ]
