QPD1020
2.7 – 3.5 GHz, 50 V, 30 W GaN RF Input-Matched Transistor
2.7 – 3.1 GHz EVB 2.9 GHz Performance1
Parameter
Min
–
Typ
17
Max
Units
ꢁdB
Linear Gain, GLIN
–
–
Output Power at 3dB compression point, P3dB
–
25
W
Drain Efficiency at 3dB compression point,
DEFF3dB
–
–
57.6
14
–
–
%
Gain at 3dB compression point, G3dB
Notes:
dB
1. VD = +50ꢁV, IDQ = 52.5ꢁmA, Temp = +25ꢁ°C, Pulse Width = 128 uS, Duty Cycle = 10%
RF Characterization – Mismatch Ruggedness at 2.9 GHz
Symbol Parameter
dB Compression
Typical
VSWR
Impedance Mismatch Ruggedness
3
ꢁ10:1
Test conditions unless otherwise noted: TA = 25 °C, VD = 50 V, IDQ = 52.5 mA, Pulsed, 128 uS Pulse Width, 10% Duty Cycle
Input drive power is determined at pulsed 3dB compression under matched condition at EVB output connector.
Datasheet Rev. B, Sept. 18, 2017 | Subject to change without notice
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