QPD1020
2.7 – 3.5 GHz, 50 V, 30 W GaN RF Input-Matched Transistor
Typical Measured Performance – Load-Pull Drive-up1, 2
Notes:
1. Test Conditions: VD = 50 V, IDQ = 52.5 mA, 100 uS Pulse Width, 20% Duty Cycle
2. See page 16 for load-pull and source-pull reference planes where the performance was measured.
Gain and PAE vs. Output Power
2.7 GHz - Efficiency Tuned
Gain and PAE vs. Output Power
2.7 GHz - Power Tuned
22
21
20
19
18
17
16
15
14
13
12
100
90
80
70
60
50
40
30
20
10
0
20
19
18
17
16
15
14
13
12
11
10
100
90
80
70
60
50
40
30
20
10
0
Gain
PAE
Gain
PAE
Zs(1fo) = 38.11-10.27iΩ
Zl(1fo) = 7.24+15.67iΩ
Zs(1fo) = 38.11-10.27iΩ
Zl(1fo) = 11.89+8.17iΩ
30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46
Output Power [dBm]
30 31 32 33 34 35 36 37 38 39 40 41 42 43 44
Output Power [dBm]
Gain and PAE vs. Output Power
3.1 GHz - Power Tuned
Gain and PAE vs. Output Power
3.1 GHz - Efficiency Tuned
20
100
22
100
Gain
PAE
Gain
PAE
19
18
17
16
15
14
13
12
11
10
90
80
70
60
50
40
30
20
10
0
21
20
19
18
17
16
15
14
13
12
90
80
70
60
50
40
30
20
10
0
Zs(1fo) = 40.19-16.32iΩ
Zl(1fo) = 11.76+7.36iΩ
Zs(1fo) = 40.19-16.32iΩ
Zl(1fo) = 6.77+12.37iΩ
30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46
Output Power [dBm]
30 31 32 33 34 35 36 37 38 39 40 41 42 43 44
Output Power [dBm]
Gain and PAE vs. Output Power
3.5 GHz - Power Tuned
Gain and PAE vs. Output Power
3.5 GHz - Efficiency Tuned
20
100
22
100
Gain
PAE
Gain
PAE
19
18
17
16
15
14
13
12
11
10
90
80
70
60
50
40
30
20
10
0
21
20
19
18
17
16
15
14
13
12
90
80
70
60
50
40
30
20
10
0
Zs(1fo) = 35.39-14.88iΩ
Zl(1fo) = 8.62+5.79i
Zs(1fo) = 35.39-14.88iΩ
Zl(1fo) = 6.47+10.17iΩ
Ω
30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46
Output Power [dBm]
30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45
Output Power [dBm]
Datasheet Rev. B, Sept. 18, 2017 | Subject to change without notice
www.qorvo.com
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