TPS61196
SLVSBG1C –OCTOBER 2012–REVISED FEBRUARY 2013
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ELECTRICAL CHARACTERISTICS (continued)
VIN= 24V, TA = –40°C to 85°C, typical values are at TA = 25°C, C1 = 10μF, C2 = 2.2μF, C3 = 1.0μF, EC1 = EC2 = 100μF
(unless otherwise noted)
PARAMETER
IFB REGULATION VOLTAGE
TEST CONDITIONS
MIN
TYP
MAX UNIT
Measured on VIFB(min), other IFB
voltages are 0.5V above VIFB(min).
VIFB
Regulation voltage at IFB
508
mV
IIFB = 130 mA, VIFBV = 0.5 V
IFB Regulation voltage setting sourcing
current at IFBV
IIFBV
VIFBV = 0.5 V
0.247
0.3
0.25 0.253
1.0
IISET
V
VIFBV
IFBV voltage setting range
BOOST REFERENCE VOLTAGE
Reference voltage range for Boost
Controller
VREF
0
3.1
25
V
IREF_LEAK
OSCILLATOR
fSW
Leakage current at REF pin
–25
nA
Switching frequency
RFSW = 200 kΩ
187
90%
3.5
200
1.8
213
kHz
V
VFSW
FSW pin reference voltage
Maximum duty cycle
Dmax
fSW = 200 kHz
94%
200
98%
ton(min)
Minimum pulse width
Logic high input voltage
Logic low input voltage
ns
V
VFSW_H
VFSW_L
0.5
V
ERROR AMPLIFIER
ISINK
ISOURCE
GmEA
REA
Comp pin sink current
VOVP = VREF + 200mV, VCOMP = 1V
VOVP = VREF – 200mV, VCOMP = 1V
20
20
µA
µA
Comp pin source current
Error amplifier transconductance
Error amplifier output resistance
Error amplifier crossover frequency
90
120
20
150
µS
M Ω
kHz
fEA
1000
GATE DRIVER
RGDRV(SRC) Gate driver impedance when sourcing
RGDRV(SNK) Gate driver impedance when sinking
VDD = 6 V, IGDRV = –20 mA
VDD = 6 V, IGDRV = 20 mA
VGDRV = 5 V
2
1
3
Ω
1.5
Ω
IGDRV(SRC)
IGDRV(SNK)
VISNS(OC)
Gate driver source current
Gate driver sink current
200
400
376
mA
mA
mV
VGDRV = 1 V
Overcurrent detection threshold
VIN = 8 V to 30 V, TJ = 25°C to 125°C
400
424
OVER VOLTAGE PROTECTION (OVP)
VOVPTH
IOVP
Output voltage OVP threshold
Leakage current
2.95
3.02
0
3.09
100
V
nA
V
–100
VIFB_OVP
IFBx over voltage threshold
PWM ON
38
LED SHORT DETECTION
IFBP
LED short detection sourcing current
VFBP = 1 V
0.247
1
0.25 0.253
IISET
FAULT INDICATOR
IFLT_H
IFLT_L
THERMAL SHUTDOWN
Tshutdown Thermal shutdown threshold
Thys Thermal shutdown threshold hysteresis
Leakage current in high impedance
VFLT = 24 V
VFLT = 1 V
1
2
nA
Sink current at low output
mA
150
15
°C
°C
4
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