TPS61196
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SLVSBG1C –OCTOBER 2012–REVISED FEBRUARY 2013
RECOMMENDED OPERATING CONDITIONS(1)
MIN NOM
MAX UNIT
VIN
VOUT
L1
Input voltage range
8
VIN
10
30
120
100
V
V
Output voltage range
Inductor
µH
µF
µF
kHz
kHz
°C
CIN
COUT
fSW
fDIM
TA
Input capacitor
10
Output capacitor
22
220
800
22
Boost regulator switching frequency
PWM dimming frequency
Operating ambient temperature
Operating junction temperature
100
0.09
–40
–40
85
TJ
125
°C
(1) Customers need to verify the component value in their application if the values are different from the recommended values.
ELECTRICAL CHARACTERISTICS
VIN= 24V, TA = –40°C to 85°C, typical values are at TA = 25°C, C1 = 10μF, C2 = 2.2μF, C3 = 1.0μF, EC1 = EC2 = 100μF
(unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX UNIT
POWER SUPPLY
VIN
Input voltage range
8
30
V
V
VVIN_UVLO
VVIN_HYS
Iq_VIN
Under voltage lockout threshold
VIN UVLO hysteresis
VIN falling
6.5
7.0
300
mV
mA
Operating quiescent current into VIN
Device enabled, no switching, VIN = 30 V
2.0
VIN = 12 V,
VIN = 30 V
25
50
ISD
Shutdown current
µA
V
VDD
Regulation voltage for internal circuit
0 mA < IDD < 15 mA
5.7
1.8
6.0
1.6
6.3
EN and PWMx
VH
Logic high input on EN,PWMx
VIN = 8 V to 30 V
VIN = 8 V to 30 V
V
V
VL
Logic Low input on EN, PWMx
0.8
3.0
RPD
Pull-down resistance on EN, PWMx
0.8
MΩ
UVLO
VUVLOTH
Threshold voltage at UVLO pin
UVLO input bias current
1.204
1.229 1.253
V
VUVLO = VUVLOTH – 50 mV
VUVLO = VUVLOTH + 50 mV
–0.1
–4.3
a
0.1
IUVLO
µA
-3.9
–3.3
SOFT START
PWM ON, VREF<2.0V
PWM ON, VREF>2.0V
200
10
ISS
Soft start charging current
µA
CURRENT REGULATION
VISET
ISET pin voltage
1.217
120
1.229 1.240
V
IISET_P
KISET
ISET short to ground protection threshold
Current multiple IIFB/IISET
150
180
µA
IISET = 32.56µA, VIFB = 0.5V
IISET = 32.56µA, VIFB = 0.5V
3932
127.4
3992
4052
IIFB(AVG)
Current accuracy
130 132.6
mA
Current matching; (IFB(MAX)
IFB(MIN))/2IFB(AVG)
-
KIFB(M)
IISET = 32.56µA, VIFB = 0.5V
0.5%
1.5%
1
IIFB_LEAK
IIFB_max
IFB pin leakage current at dimming off
Current sink max output current
IFB voltage < 40 V
VIFBV = 350 mV
µA
130
mA
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