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TPS54350PWPR 参数 Datasheet PDF下载

TPS54350PWPR图片预览
型号: TPS54350PWPR
PDF下载: 下载PDF文件 查看货源
内容描述: 4.5 V至20 V输入, 3 -A输出同步PWM与INTEGRANTED FET SWITCHER ( SWIFT ) [4.5-V TO 20-V INPUT, 3-A OUTPUT SYNCHRONOUS PWM SWITCHER WITH INTEGRANTED FET(SWIFT)]
分类和应用: 稳压器开关式稳压器或控制器电源电路开关式控制器光电二极管输出元件输入元件
文件页数/大小: 32 页 / 876 K
品牌: TI [ TEXAS INSTRUMENTS ]
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www.ti.com  
SLVS456C − OCTOBER 2003 − REVISED OCTOBER 2004  
ELECTRICAL CHARACTERISTICS  
T = –40°C to 125°C, VIN = 4.5 V to 20 V (unless otherwise noted)  
J
PARAMETER  
TEST CONDITIONS  
MIN  
TYP  
MAX  
UNIT  
FEED− FORWARD MODULATOR (INTERNAL SIGNAL)  
Modulator gain  
VIN = 12 V, T = 25°C  
8
V/V  
ns  
J
Modulator gain variation  
Minimum controllable ON time  
−25%  
80%  
25%  
(1)  
180  
(1)  
Maximum duty factor  
ERROR AMPLIFIER (VSENSE AND COMP PINS)  
VIN = 4.5 V  
86%  
(1)  
Error amplifier open loop voltage gain  
60  
80  
dB  
MHz  
nA  
(1)  
Error amplifier unity gain bandwidth  
Input bias current, VSENSE pin  
Output voltage slew rate (symmetric)  
1.0  
2.8  
500  
0.5  
10  
(1)  
COMP  
1.5  
V/µs  
ENABLE (ENA PIN)  
Disable low level input voltage  
V
(1)  
f = 250 kHz, RT = ground  
4.6  
2.3  
5
s
Internal slow-start time (10% to 90%)  
ms  
(1)  
f = 500 kHz, RT = Hi−Z  
s
Pullup current source  
Pulldown MOSFET  
1.8  
µA  
II(ENA)=1 mA  
0.1  
V
POWER GOOD (PWRGD PIN)  
Power good threshold  
Rising voltage  
fs = 250 kHz  
fs = 500 kHz  
97%  
4
(1)  
Rising edge delay  
ms  
2
Output saturation voltage  
Output saturation voltage  
Open drain leakage current  
I
I
= 1 mA, VIN > 4.5 V  
0.05  
0.76  
V
V
sink  
= 100 µA, VIN = 0 V  
PWRGD  
sink  
Voltage on PWRGD = 6 V  
3
µA  
CURRENT LIMIT  
Current limit  
Current limit Hiccup Time  
THERMAL SHUTDOWN  
Thermal shutdown trip point  
VIN = 12 V  
3.3  
4.5  
4.5  
6.5  
A
(1)  
f = 500 kHz  
s
ms  
(1)  
165  
7
_C  
_C  
(1)  
Thermal shutdown hysteresis  
LOW SIDE MOSFET DRIVER (LSG PIN)  
Turn on rise time, (10%/90%)  
(1)  
VIN = 4.5 V, Capacitive load = 1000 pF  
VIN = 12 V  
15  
60  
7.5  
5
ns  
ns  
(1)  
Deadtime  
VIN = 4.5 V sink/source  
VIN = 12 V sink/source  
Driver ON resistance  
OUTPUT POWER MOSFETS (PH PIN)  
Phase node voltage when disabled  
DC conditions and no load, ENA = 0 V  
VIN = 4.5 V, Idc = 100 mA  
0.5  
1.13  
1.08  
150  
100  
V
V
1.42  
1.38  
300  
200  
Voltage drop, low side FET and diode  
VIN = 12 V, Idc = 100 mA  
VIN = 4.5 V, BOOT−PH = 4.5 V, I = 0.5 A  
O
(2)  
r , high side power MOSFET switch  
DS(ON)  
mΩ  
VIN = 12 V, BOOT−PH = 8 V, I = 0.5 A  
O
(1)  
(2)  
Ensured by design, not production tested.  
Resistance from VIN to PH pins.  
4
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