TPS54350
SLVS456C − OCTOBER 2003 − REVISED OCTOBER 2004
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ELECTRICAL CHARACTERISTICS
TJ = –40°C to 125°C, VIN = 4.5 V to 20 V (unless otherwise noted)
PARAMETER
FEED− FORWARD MODULATOR (INTERNAL SIGNAL)
Modulator gain
Modulator gain variation
Minimum controllable ON time (1)
Maximum duty factor (1)
ERROR AMPLIFIER (VSENSE AND COMP PINS)
Error amplifier open loop voltage gain (1)
Error amplifier unity gain bandwidth (1)
Input bias current, VSENSE pin
COMP
Output voltage slew rate (symmetric) (1)
Disable low level input voltage
Internal slow-start time (10% to 90%)
Pullup current source
Pulldown MOSFET
POWER GOOD (PWRGD PIN)
Power good threshold
Rising edge delay (1)
Output saturation voltage
PWRGD
Output saturation voltage
Open drain leakage current
CURRENT LIMIT
Current limit
Current limit Hiccup Time (1)
THERMAL SHUTDOWN
Thermal shutdown trip point (1)
Thermal shutdown hysteresis (1)
LOW SIDE MOSFET DRIVER (LSG PIN)
Turn on rise time, (10%/90%) (1)
Deadtime (1)
Driver ON resistance
OUTPUT POWER MOSFETS (PH PIN)
Phase node voltage when disabled
Voltage drop, low side FET and diode
rDS(ON), high side power MOSFET switch(2)
(1) Ensured by design, not production tested.
(2) Resistance from VIN to PH pins.
DC conditions and no load, ENA = 0 V
VIN = 4.5 V, Idc = 100 mA
VIN = 12 V, Idc = 100 mA
VIN = 4.5 V, BOOT−PH = 4.5 V, IO = 0.5 A
VIN = 12 V, BOOT−PH = 8 V, IO = 0.5 A
0.5
1.13
1.08
150
100
1.42
1.38
300
200
mΩ
V
V
VIN = 4.5 V, Capacitive load = 1000 pF
VIN = 12 V
VIN = 4.5 V sink/source
VIN = 12 V sink/source
165
7
15
60
7.5
5
_C
_C
ns
ns
Ω
VIN = 12 V
fs = 500 kHz
3.3
4.5
4.5
6.5
A
ms
Rising voltage
fs = 250 kHz
fs = 500 kHz
Isink = 1 mA, VIN > 4.5 V
Isink = 100
µA,
VIN = 0 V
Voltage on PWRGD = 6 V
97%
4
2
0.05
0.76
3
ms
V
V
µA
II(ENA)=1 mA
fs = 250 kHz, RT = ground (1)
fs = 500 kHz, RT = Hi−Z (1)
1.8
4.6
2.3
5
0.1
10
ms
µA
V
1.5
0.5
ENABLE (ENA PIN)
V
VIN = 4.5 V
VIN = 12 V, TJ = 25°C
−25%
180
80%
60
1.0
86%
80
2.8
500
dB
MHz
nA
V/µs
8
25%
ns
V/V
TEST CONDITIONS
MIN
TYP
MAX
UNIT
4
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