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TPS51285A 参数 Datasheet PDF下载

TPS51285A图片预览
型号: TPS51285A
PDF下载: 下载PDF文件 查看货源
内容描述: 超低静态( ULQâ ?? ¢ )双路同步降压型控制器, 5V和3.3V的LDO [Ultra-Low Quiescent (ULQ™) Dual Synchronous Step-Down Controller with 5V and 3.3V LDOs]
分类和应用: 控制器
文件页数/大小: 32 页 / 1375 K
品牌: TI [ TEXAS INSTRUMENTS ]
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TPS51285A  
TPS51285B  
SLVSBX0 APRIL 2013  
www.ti.com  
Layout Considerations  
Good layout is essential for stable power supply operation. Follow these guidelines for an efficient PCB layout.  
Placement  
Place voltage setting resistors close to the device pins.  
Place bypass capacitors for VREG5 and VREG3 close to the device pins.  
Routing (Sensitive analog portion)  
Use small copper space for VFBx. There are short and narrow traces to avoid noise coupling.  
Connect VFB resistor trace to the positive node of the output capacitor. Routing inner layer away from power  
traces is recommended.  
Use short and wide trace from VFB resistor to vias to GND (internal GND plane).  
Routing (Power portion)  
Use wider/shorter traces of DRVL for low-side gate drivers to reduce stray inductance.  
Use the parallel traces of SW and DRVH for high-side MOSFET gate drive in a same layer or on adjoin  
layers, and keep them away from DRVL.  
Use wider/ shorter traces between the source terminal of the high-side MOSFET and the drain terminal of the  
low-side MOSFET  
Thermal pad is the GND terminal of this device. Five or more vias with 0.33-mm (13-mils) diameter connected  
from the thermal pad to the internal GND plane should be used to have strong GND connection and help heat  
dissipation.  
20  
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Copyright © 2013, Texas Instruments Incorporated  
Product Folder Links: TPS51285A TPS51285B  
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