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TPS3808G01QDBVRQ1 参数 Datasheet PDF下载

TPS3808G01QDBVRQ1图片预览
型号: TPS3808G01QDBVRQ1
PDF下载: 下载PDF文件 查看货源
内容描述: 低静态电流可编程延迟监控电路 [LOW-QUIESCENT-CURRENT PROGRAMMABLE-DELAY SUPERVISORY CIRCUIT]
分类和应用: 监控
文件页数/大小: 20 页 / 785 K
品牌: TI [ TEXAS INSTRUMENTS ]
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TPS3808-Q1  
SBVS085H JANUARY 2007REVISED JUNE 2012  
www.ti.com  
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with  
appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.  
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more  
susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.  
ORDERING INFORMATION(1)  
NOMINAL  
SUPPLY  
VOLTAGE  
THRESHOLD  
VOLTAGE  
(VIT)  
ORDERABLE  
PART NUMBER  
TOP-SIDE  
MARKING  
TJ  
PACKAGE(2)  
SON – DRV Reel of 3000  
TPS3808G01QDRVRQ1 PSJQ  
TPS3808G01QDBVRQ1 BAZ  
TPS3808G125QDBVRQ1 QWZ  
TPS3808G12QDBVRQ1 CEM  
TPS3808G15QDBVRQ1 OFR  
TPS3808G18QDBVRQ1 OBZ  
TPS3808G30QDBVRQ1 AVP  
TPS3808G33QDBVRQ1 AVQ  
TPS3808G50QDBVRQ1 CEL  
Adjustable  
0.405 V  
SOT-23 – DBV Reel of 3000  
SOT-23 – DBV Reel of 3000  
1.25 V  
1.2 V  
1.5 V  
1.8 V  
3 V  
1.16 V  
1.12 V  
1.4 V  
–40°C to 125°C  
1.67 V  
2.79 V  
3.07 V  
4.65 V  
3.3 V  
5 V  
(1) For the most current package and ordering information, see the Package Option Addendum at the end of this document, or see the TI  
web site at www.ti.com.  
(2) Package drawings, thermal data, and symbolization are available at www.ti.com/packaging.  
ABSOLUTE MAXIMUM RATINGS  
over operating junction temperature range (unless otherwise noted)(1)  
VDD  
VCT  
VMR  
Input voltage range  
CT voltage range  
–0.3 V to 7 V  
–0.3 V to (VDD + 0.3) V  
,
VRESET  
,
MR, RESET, SENSE voltage ranges  
–0.3 V to 7 V  
VSENSE  
IRESET  
TJ  
RESET pin current  
Operating junction temperature range(2)  
5 mA  
–40°C to 150°C  
–65°C to 150°C  
2 kV  
Tstg  
Storage temperature range  
Human-Body Model (HBM)  
TPS3808GXX  
500 V  
Charged-Device Model (CDM)  
ESD  
Electrostatic discharge rating  
TPS3808G125QDBVRQ1  
1000 V  
Machine Model (MM),  
TPS3808G01QDRVRQ1,TPS3808G125QDBVRQ1  
50 V  
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings  
only, and functional operation of the device at these or any other conditions beyond those indicated under the Electric Characteristics is  
not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.  
(2) Due to the low dissipated power in this device, it is assumed that TJ = TA.  
2
Copyright © 2007–2012, Texas Instruments Incorporated  
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