TMS320C6672
Multicore Fixed and Floating-Point Digital Signal Processor
SPRS708C—February 2012
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6.3 Electrical Characteristics
Table 6-3
Electrical Characteristics
Over Recommended Ranges of Supply Voltage and Operating Case Temperature (Unless Otherwise Noted)
Parameter
LVCMOS (1.8 V)
Test Conditions (1)
IO = IOH
Min
DVDD18 - 0.45
DVDD15 - 0.4
Typ
Max Unit
VOH High-level output voltage
DDR3
V
I2C (2)
LVCMOS (1.8 V)
IO = IOL
0.45
VOL Low-level output voltage
DDR3
I2C
0.4
0.4
5
V
IO = 3 mA, pulled up to 1.8 V
No IPD/IPU
-5
50
LVCMOS (1.8 V)
Internal pullup
100
170 μA
(3)
II
Input current [DC]
Internal pulldown
-170
-100
-50
0.1 × DVDD18 V < VI < 0.9 ×
DVDD18 V
I2C
-10
10 μA
LVCMOS (1.8 V)
-6
IOH
IOL
IOZ
High-level output current [DC] DDR3
I2C (4)
-8 mA
LVCMOS (1.8 V)
6
Low-level output current [DC] DDR3
I2C
8
3
2
2
2
mA
LVCMOS (1.8 V)
DDR3
I2C
-2
-2
-2
(5)
Off-state output current [DC]
μA
End of Table 6-3
1 For test conditions shown as MIN, MAX, or TYP, use the appropriate value specified in the recommended operating conditions table.
2 I2C uses open collector IOs and does not have a VOH Minimum.
3 II applies to input-only pins and bi-directional pins. For input-only pins, II indicates the input leakage current. For bi-directional pins, II includes input leakage current and
off-state (Hi-Z) output leakage current.
4 I2C uses open collector IOs and does not have a IOH Maximum.
5 IOZ applies to output-only pins, indicating off-state (Hi-Z) output leakage current.
Copyright 2012 Texas Instruments Incorporated
Device Operating Conditions
111
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