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TMS320C6672ACYP25 参数 Datasheet PDF下载

TMS320C6672ACYP25图片预览
型号: TMS320C6672ACYP25
PDF下载: 下载PDF文件 查看货源
内容描述: 多核固定和浮点数字信号处理器 [Multicore Fixed and Floating-Point Digital Signal Processor]
分类和应用: 数字信号处理器
文件页数/大小: 228 页 / 2410 K
品牌: TI [ TEXAS INSTRUMENTS ]
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TMS320C6672  
Multicore Fixed and Floating-Point Digital Signal Processor  
SPRS708C—February 2012  
www.ti.com  
6 Device Operating Conditions  
6.1 Absolute Maximum Ratings  
Table 6-1  
Absolute Maximum Ratings (1)  
Over Operating Case Temperature Range (Unless Otherwise Noted)  
CVDD  
-0.3 V to 1.3 V  
-0.3 V to 1.3 V  
CVDD1  
DVDD15  
DVDD18  
VREFSSTL  
-0.3 V to 2.45 V  
-0.3 V to 2.45 V  
0.49 × DVDD15 to 0.51 × DVDD15  
-0.3 V to 1.3 V  
Supply voltage range (2)  
:
VDDT1, VDDT2, VDDT3  
VDDT4, VDDT5, VDDT6  
VDDR1, VDDR2, VDDR3  
-0.3 V to 2.45 V  
-0.3 V to 2.45 V  
0 V  
AVDDA1, AVDDA2, AVDDA3  
VSS Ground  
LVCMOS (1.8V)  
DDR3  
-0.3 V to DVDD18+0.3 V  
-0.3 V to 2.45 V  
-0.3 V to 2.45 V  
-0.3 V to DVDD18+0.3 V  
-0.3 V to 1.3 V  
I2C  
Input voltage (VI) range:  
LVDS  
LJCB  
SerDes  
-0.3 V to CVDD1+0.3 V  
-0.3 V to DVDD18+0.3 V  
-0.3 V to 2.45 V  
-0.3 V to 2.45 V  
-0.3 V to CVDD1+0.3 V  
0°C to 85°C  
LVCMOS (1.8V)  
DDR3  
I2C  
Output voltage (VO) range:  
SerDes  
Commercial  
Extended  
Operating case temperature range, TC:  
-40°C to 100°C  
1000 V  
HBM (human body model) (4)  
CDM (charged device model) (5)  
(3)  
ESD stress voltage, VESD  
Overshoot/undershoot (6)  
:
250 V  
LVCMOS (1.8V)  
20% Overshoot/Undershoot for 20% of  
Signal Duty Cycle  
DDR3  
I2C  
Storage temperature range, Tstg  
:
-65°C to 150°C  
End of Table 6-1  
1 Stresses beyond those listed under "absolute maximum ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the  
device at these or any other conditions beyond those indicated under "recommended operating conditions" is not implied. Exposure to absolute-maximum-rated  
conditions for extended periods may affect device reliability.  
2 All voltage values are with respect to VSS  
.
3 Electrostatic discharge (ESD) to measure device sensitivity/immunity to damage caused by electrostatic discharges into the device.  
4
5
Level listed above is the passing level per ANSI/ESDA/JEDEC JS-001-2010. JEDEC document JEP155 states that 500 V HBM allows safe manufacturing with a standard ESD  
control process, and manufacturing with less than 500 V HBM is possible if necessary precautions are taken. Pins listed as 1000 V may actually have higher performance.  
Level listed above is the passing level per EIA-JEDEC JESD22-C101E. JEDEC document JEP157 states that 250 V CDM allows safe manufacturing with a standard ESD control  
process. Pins listed as 250 V may actually have higher performance.  
6 Overshoot/Undershoot percentage relative to I/O operating values - for example the maximum overshoot value for 1.8-V LVCMOS signals is DVDD18 + 0.20 × DVDD18 and  
maximum undershoot value would be VSS - 0.20 × DVDD18  
Copyright 2012 Texas Instruments Incorporated  
Device Operating Conditions  
109  
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