欢迎访问ic37.com |
会员登录 免费注册
发布采购

SN74LVC1G58DBVRE4 参数 Datasheet PDF下载

SN74LVC1G58DBVRE4图片预览
型号: SN74LVC1G58DBVRE4
PDF下载: 下载PDF文件 查看货源
内容描述: 可配置多函数栅 [Configurable Multiple-Function Gate]
分类和应用:
文件页数/大小: 24 页 / 1156 K
品牌: TI [ TEXAS INSTRUMENTS ]
 浏览型号SN74LVC1G58DBVRE4的Datasheet PDF文件第2页浏览型号SN74LVC1G58DBVRE4的Datasheet PDF文件第3页浏览型号SN74LVC1G58DBVRE4的Datasheet PDF文件第4页浏览型号SN74LVC1G58DBVRE4的Datasheet PDF文件第5页浏览型号SN74LVC1G58DBVRE4的Datasheet PDF文件第6页浏览型号SN74LVC1G58DBVRE4的Datasheet PDF文件第7页浏览型号SN74LVC1G58DBVRE4的Datasheet PDF文件第8页浏览型号SN74LVC1G58DBVRE4的Datasheet PDF文件第9页  
SN74LVC1G58  
www.ti.com  
SCES415N NOVEMBER 2002REVISED DECEMBER 2013  
Configurable Multiple-Function Gate  
Check for Samples: SN74LVC1G58  
1
FEATURES  
DESCRIPTION  
This configurable multiple-function gate is designed  
for 1.65-V to 5.5-V VCC operation.  
2
Available in the Texas Instruments NanoFree™  
Package  
The SN74LVC1G58 device features configurable  
multiple functions. The output state is determined by  
eight patterns of 3-bit input. The user can choose the  
logic functions AND, OR, NAND, NOR, XOR, inverter,  
and noninverter. All inputs can be connected to VCC  
or GND.  
Supports 5-V VCC Operation  
Inputs Accept Voltages to 5.5 V  
Supports Down Translation to VCC  
Max tpd of 6.3 ns at 3.3 V  
Low Power Consumption, 10-µA Max ICC  
±24-mA Output Drive at 3.3 V  
This device functions as an independent gate, but  
because of Schmitt action, it may have different input  
threshold levels for positive-going (VT+) and negative-  
going (VT–) signals.  
Ioff Supports Live Insertion, Partial-Power-  
Down Mode, and Back-Drive Protection  
Latch-Up Performance Exceeds 100 mA Per  
JESD 78, Class II  
NanoFree™ package technology is  
a
major  
breakthrough in IC packaging concepts, using the die  
as the package.  
ESD Protection Exceeds JESD 22  
2000-V Human-Body Model (A114-A)  
200-V Machine Model (A115-A)  
This device is fully specified for partial-power-down  
applications using Ioff. The Ioff circuitry disables the  
outputs, preventing damaging current backflow  
through the device when it is powered down.  
1000-V Charged-Device Model (C101)  
DBV PACKAGE  
(TOP VIEW)  
DCK PACKAGE  
(TOP VIEW)  
DRL PACKAGE  
(TOP VIEW)  
YZP PACKAGE  
(BOTTOM VIEW)  
3
4
Y
V
In0  
GND  
In1  
1
2
3
6
In1  
GND  
In0  
In2  
V
In1  
GND  
In0  
In2  
V
1
2
3
6
1
2
3
6
In1  
GND  
In0  
In2  
V
2 5  
CC  
5
4
CC  
5
4
CC  
1
6
In2  
Y
CC  
5
4
Y
Y
DRY PACKAGE  
(TOP VIEW)  
DSF PACKAGE  
(TOP VIEW)  
1
2
3
6
5
4
ln2  
ln1  
GND  
ln0  
1
2
3
6
5
4
ln1  
ln2  
VCC  
Y
VCC  
Y
See mechanical drawings for dimensions.  
GND  
ln0  
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of  
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.  
2
NanoFree is a trademark of Texas Instruments.  
PRODUCTION DATA information is current as of publication date.  
Products conform to specifications per the terms of the Texas  
Instruments standard warranty. Production processing does not  
necessarily include testing of all parameters.  
Copyright © 2002–2013, Texas Instruments Incorporated  
 
 
 
 复制成功!