SN65HVD72
SN65HVD75
SN65HVD78
SLLSE11B –MARCH 2012–REVISED JUNE 2012
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These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
Table 2. DRIVER FUNCTION TABLE
INPUT
ENABLE
OUTPUTS
D
DE
A
B
L
H
H
H
L
Actively drive bus High
Actively drive bus Low
Driver disabled
L
X
H
L
H
Z
Z
L
Z
Z
H
X
OPEN
H
Driver disabled by default
Actively drive bus High by default
OPEN
Table 3. RECEIVER FUNCTION TABLE
DIFFERENTIAL INPUT
VID = VA – VB
VIT+ < VID
ENABLE
OUTPUT
RE
R
H
?
L
Receive valid bus High
Indeterminate bus state
Receive valid bus Low
Receiver disabled
VIT– < VID < VIT+
VID < VIT–
L
L
L
X
H
Z
Z
H
H
H
X
OPEN
Receiver disabled by default
Fail-safe high output
fail-safe high output
Open-circuit bus
Short-circuit bus
Idle (terminated) bus
L
L
L
fail-safe high output
2
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