欢迎访问ic37.com |
会员登录 免费注册
发布采购

SN65HVD75 参数 Datasheet PDF下载

SN65HVD75图片预览
型号: SN65HVD75
PDF下载: 下载PDF文件 查看货源
内容描述: 3.3V电源RS - 485与IEC ESD保护 [3.3V-Supply RS-485 with IEC ESD Protection]
分类和应用:
文件页数/大小: 25 页 / 778 K
品牌: TI [ TEXAS INSTRUMENTS ]
 浏览型号SN65HVD75的Datasheet PDF文件第12页浏览型号SN65HVD75的Datasheet PDF文件第13页浏览型号SN65HVD75的Datasheet PDF文件第14页浏览型号SN65HVD75的Datasheet PDF文件第15页浏览型号SN65HVD75的Datasheet PDF文件第17页浏览型号SN65HVD75的Datasheet PDF文件第18页浏览型号SN65HVD75的Datasheet PDF文件第19页浏览型号SN65HVD75的Datasheet PDF文件第20页  
SN65HVD72  
SN65HVD75  
SN65HVD78  
SLLSE11B MARCH 2012REVISED JUNE 2012  
www.ti.com  
Table 6. Bill of Materials  
Device  
Function  
Order Number  
SN65HVD72D  
Manufacturer  
XCVR  
3.3V, 250kbps RS-485 Transceiver  
10Ω, Pulse-Proof Thick-Film Resistor  
Bidirectional 400W Transient Suppressor  
Bidirectional.  
TI  
R1, R2  
TVS  
CRCW0603010RJNEAHP  
CDSOT23-SM712  
Vishay  
Bourns  
Bourns  
TBU1, TBU2  
TBU-CA-065-200-WH  
200mA Transient Blocking Unit 200V, Metal-  
Oxide Varistor  
MOV1, MOV2  
MOV-10D201K  
Bourns  
Vcc  
10k  
Vcc  
Vcc  
Vcc  
10k  
0.1μF  
0.1μF  
TBU1  
R1  
R1  
1
2
3
4
8
1
2
3
4
8
7
6
5
RxD  
R
Vcc  
RxD  
MCU  
R
Vcc  
A
MOV1  
TVS  
TVS  
7
RE  
DE  
D
A
B
RE  
DE  
D
MCU  
DIR  
XCVR  
XCVR  
6
5
DIR  
TxD  
B
MOV2  
TxD  
GND  
GND  
R2  
R2  
TBU2  
10k  
10k  
Figure 22. Transient Protections Against ESD, EFT, and Surge Transients  
The left circuit provides surge protection of 500 V transients, while the right protection circuits can withstand  
surge transients of 5 kV.  
Design and Layout Considerations For Transient Protection  
Because ESD and EFT transients have a wide frequency bandwidth from approximately 3 MHz to 3 GHz, high-  
frequency layout techniques must be applied during PCB design.  
In order for your PCB design to be successful start with the design of the protection circuit in mind.  
1. Place the protection circuitry close to the bus connector to prevent noise transients from penetrating your  
board.  
2. Use Vcc and ground planes to provide low-inductance. Note that high-frequency currents follow the path of  
least inductance and not the path of least impedance.  
3. Design the protection components into the direction of the signal path. Do not force the transients currents to  
divert from the signal path to reach the protection device.  
4. Apply 100 nF to 220 nF bypass capacitors as close as possible to the Vcc-pins of transceiver, UART,  
controller ICs on the board.  
5. Use at least two vias for Vcc and ground connections of bypass capacitors and protection devices to  
minimize effective via-inductance.  
6. Use 1k to 10k pull-up/down resistors for enable lines to limit noise currents in theses lines during transient  
events.  
7. Insert pulse-proof resistors into the A and B bus lines if the TVS clamping voltage is higher than the specified  
maximum voltage of the transceiver bus terminals. These resistors limit the residual clamping current into the  
transceiver and prevent it from latching up.  
8. While pure TVS protection is sufficient for surge transients up to 1 kV, higher transients require metal-oxide  
varistors (MOVs) which reduce the transients to a few hundred volts of clamping voltage, and transient  
blocking units (TBUs) that limit transient current to some 200 mA.  
16  
Submit Documentation Feedback  
Copyright © 2012, Texas Instruments Incorporated  
Product Folder Link(s): SN65HVD72 SN65HVD75 SN65HVD78  
 
 复制成功!