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SN65HVD75 参数 Datasheet PDF下载

SN65HVD75图片预览
型号: SN65HVD75
PDF下载: 下载PDF文件 查看货源
内容描述: 3.3V电源RS - 485与IEC ESD保护 [3.3V-Supply RS-485 with IEC ESD Protection]
分类和应用:
文件页数/大小: 25 页 / 778 K
品牌: TI [ TEXAS INSTRUMENTS ]
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SN65HVD72  
SN65HVD75  
SN65HVD78  
www.ti.com  
SLLSE11B MARCH 2012REVISED JUNE 2012  
The maximum bus length is typically given as 4000 ft or 1200 m, and represents the length of an AWG 24 cable  
whose cable resistance approaches the value of the termination resistance, thus reducing the bus signal by half  
or 6 dB. Actual maximum usable cable length depends on the signaling rate, cable characteristics, and  
environmental conditions.  
Noise Immunity  
The input sensitivity of a standard RS-485 transceiver is ± 200 mV. When the differential input voltage, VID, is  
greater than + 200 mV, the receiver output turns high, for VID < –200 mV the receiver outputs low.  
R
V
HYS-min  
50mV  
V
ID  
- mV  
-70  
-20  
0
70  
V
= 140mVpp  
noise-max  
Figure 20. SN65HVD7x Noise Immunity  
The SN65HVD7x transceiver family implements high receiver noise-immunity by providing a maximum positive-  
going input threshold of - 20 mV and a minimum hysteresis of 50 mV. In the case of a noisy input condition  
therefore, a differential noise voltage of up to 140 mVPP can be present without causing the receiver output to  
change states from high to low. This increased noise immunity eliminates the need for idle-bus failsafe bias  
resistors and allows for long haul data transmissions in noisy environments.  
Transient Protection  
The bus terminals of the SN65HVD7x transceiver family possess on-chip ESD protection against ±15 kV human  
body model (HBM) and ±12 kV IEC61000-4-2 contact discharge. The IEC-ESD test is far more severe than the  
HBM-ESD test. The 50 % higher charge capacitance, CS, and 78 % lower discharge resistance, RD of the IEC-  
model produce significantly higher discharge currents than the HBM-model.  
R
R
D
C
40  
35  
30  
25  
20  
15  
10  
5
50M  
(1M)  
330Ω  
(1.5k)  
10kV IEC  
High-Voltage  
Pulse  
Generator  
Device  
Under  
Test  
150pF  
C
S
(100pF)  
10kV HBM  
0
0
50  
100  
150  
200  
250  
300  
Time - ns  
Figure 21. HBM and IEC-ESD Models and Currents in Comparison (HBM Values in Parenthesis)  
The implementation of IEC-ESD protection on-chip increases the robustness of equipment significantly, which  
most likely experience discharge events due to human contact with connectors and cables. Designers may also  
want to implement protection against much longer duration transients, typically referred to as surge transients.  
Figure 9 therefore suggests two circuit designs providing protection against light and heavy surge transients, in  
addition to ESD and EFT transients. Table A1 presents the associated bill of material.  
Copyright © 2012, Texas Instruments Incorporated  
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Product Folder Link(s): SN65HVD72 SN65HVD75 SN65HVD78  
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