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CC1110F32RHHR 参数 Datasheet PDF下载

CC1110F32RHHR图片预览
型号: CC1110F32RHHR
PDF下载: 下载PDF文件 查看货源
内容描述: 低功耗的SoC (系统级芯片)与MCU,存储器,低于1GHz的射频收发器和USB控制器 [Low-Power SoC (System-on-Chip) with MCU, Memory, Sub-1 GHz RF Transceiver, and USB Controller]
分类和应用: 存储射频控制器
文件页数/大小: 249 页 / 3133 K
品牌: TI [ TEXAS INSTRUMENTS ]
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CC1110Fx / CC1111Fx  
Setup DMA channel:  
SRCADDR=<XDATA location>  
DESTADDRR=FWDATA  
VLEN=0  
LEN=<block size>  
WORDSIZE=byte  
TMODE=single mode  
TRIG=FLASH  
SRCINC=yes  
DESTINC=no  
IRQMASK=yes  
M8=0  
PRIORITY=high  
Setup flash address  
Arm DMA Channel  
Start flash write  
Figure 21: Flash Write using DMA  
When performing DMA flash write while  
executing code from within flash memory, the  
instruction that triggers the first DMA trigger  
event FLASH (TRIG[4:0]=10010) must be  
aligned on a 2-byte boundary. Figure 22 shows  
an example of code that correctly aligns the  
instruction for triggering DMA (Note that this  
code is IAR specific). The code below is  
shown for CC1110Fx, but will also work for  
CC1111Fx if the include file is being replaced by  
ioCC1111.h  
; Write flash and generate FLASH DMA trigger  
; Code is executed from flash memory  
;
#include “ioCC1110.h”  
MODULE flashDmaTrigger.s51  
RSEG RCODE (1)  
PUBLIC halFlashDmaTrigger  
FUNCTION halFlashDmaTrigger, 0203H  
halFlashDmaTrigger:  
ORL FCTL, #0x02;  
RET;  
END;  
Figure 22: DMA Flash Write Executed from within Flash Memory  
12.3.2.2 CPU Flash Write  
to end within 40 μs after FCTL.SWBSY went  
low and also within 40 μs after a write has  
been initiated by writing a 1 to FCTL.WRITE  
(see Figure 24). Failure to do so will clear the  
FCTL.BUSY bit. FADDRH:FADDRL will contain  
the address of the location where the write  
operation failed. A new write operation can be  
started by setting FCTL.WRITEto 1 again and  
write two bytes to FWDATA. If one wants to do  
the whole write operation over again and not  
just start from where it failed, one has to erase  
the page, writing the start address to  
FADDRH:FADDRL, and setting FCTL.WRITE  
to 1 (see Section 1.1.1).  
The CPU can also write directly to the flash  
when executing program code from RAM using  
unified memory space. The CPU writes data to  
the Flash Write Data register, FWDATA. The  
flash memory is written each time two bytes  
have been written to FWDATA, if a write has  
been enabled by setting FCTL.WRITE to 1.  
The CPU can poll the FCTL.SWBSY status to  
determine when the flash is ready for two new  
bytes to be written to FWDATA.  
Note that there exist a timeout period of 40 μs  
for writing one flash word to FWDATA, thus  
writing two bytes to the FWDATA register has  
SWRS033H  
Page 86 of 246  
 
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