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BQ29330DBTR 参数 Datasheet PDF下载

BQ29330DBTR图片预览
型号: BQ29330DBTR
PDF下载: 下载PDF文件 查看货源
内容描述: 2-, 3-和4芯锂离子或锂聚合物电池保护AFE [2-,3-,AND 4-CELL LITHIUM-ION OR LITHIUM-POLYMER BATTERY PROTECTION AFE]
分类和应用: 电源电路电池电源管理电路光电二极管
文件页数/大小: 26 页 / 1128 K
品牌: TI [ TEXAS INSTRUMENTS ]
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bq29330  
www.ti.com  
SLUS673ASEPTEMBER 2005REVISED DECEMBER 2005  
ELECTRICAL CHARACTERISTICS (Continued)  
FET DRIVE CIRCUIT, TA = 25°C, CREG = 1 µF, CL = 2.2 µF, VCC or BAT = 14 V (unless otherwise noted)  
PARAMETER  
TEST CONDITIONS  
VO(FETOND) = V(DSG)– Vpack TA = 25°C  
MIN  
7.5  
8
TYP MAX  
UNIT  
12  
12  
12  
12  
3.5  
15.5  
16  
V
VGS connect 10 MΩ  
TA = –40°C to 110°C  
TA = 25°C  
Output voltage, charge,  
and discharge FETs on  
VO(FETON)  
VO(FETONC) = V(CHG)– VBAT  
7.5  
8
15.5  
16  
V
V
V
VGS connect 10 MΩ  
TA = –40°C to 110°C  
V(ZCHG)  
ZVCHG clamp voltage  
BAT = 4.5 V  
3.3  
3.7  
0.2  
0.2  
VFETOND = VDSG –Vpack  
VFETONC = VCHG –VBAT  
VO(FETOF Output voltage, charge,  
and discharge FETs off  
F)  
V(CHG)  
V(DSG)  
V(CHG)  
V(DSG)  
:
Vpack Vpack+4 V  
400 1000  
400 1000  
tr  
tf  
Rise time  
Fall time  
CL = 4700 pF  
CL = 4700 pF  
µs  
µs  
:
VBAT VBAT+4 V  
:
Vpack+VCHG (FETON) pack +1 V  
VC1+ VDSG (FETON) VC1 +1 V  
40  
40  
200  
200  
:
LOGIC, TA = 25°C, CREG = 1 µF, CL = 2.2 µF, VCC or BAT = 14 V (unless otherwise noted)  
XALERT  
60  
6
100  
10  
3
200  
20  
R(PUP)  
Internal pullup resistance SDATA, SCLK  
TA = –40°C to 110°C  
TA = –40°C to 110°C  
kΩ  
XRST  
1
6
XALERT  
0.2  
0.4  
0.6  
0.4  
SDATA, IOUT = 200 µA  
Low Logic level output  
voltage  
GPOD, IOUT = 50 µA  
VOL  
V
VCC or BAT = 7 V,  
VREG = 1.5 V,  
XRST, IOUT = 200 µA  
VIH  
SCLK (hysteresis input)  
Hysteresis  
450  
mV  
AC ELECTRICAL CHARACTERISTICS  
TA = 25°C, CREG = 1 µF, CL = 2.2 µF, VCC or BAT = 14 V (unless otherwise noted)  
PARAMETER  
TEST CONDITIONS  
MIN  
250  
50  
TYP  
MAX  
UNIT  
ms  
µs  
tWDTINT  
tWDWT  
tRST  
WDT start up detect time  
WDT detect time  
500  
100  
250  
1000  
150  
XRST Active high time  
100  
560  
µs  
9
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