bq24735
www.ti.com
SLUSAK9 –SEPTEMBER 2011
D3
PDS1040
Q1 (ACFET)
FDS6680A
RAC 10 mW
SYSTEM
Adapter +
Adapter -
C17
2200 pF
C16
0.1µF
Ri
2 ?
*
Total
Csys
R9
10 Ω
*
C1
0.1µF
C3
0.1µF
Ci
*
2.2µF
220µF
C5
1µF
ACN
VCC
C2
0.1µF
R6
4.02 kW
R10
4.02 kW
BATDRV
Q5 (BATFET)
FDS6680A
ACP
R11
4.02 kW
C15
0.01µF
C6
1µF
CMSRC
ACDRV
ACDET
REGN
BTST
D1
BAT54
R1
430 kW
C9
10uF
C8
10uF
R2
66.5 kW
Q3
Sis412DN
HIDRV
PHASE
R8
RSR
10m?
C7
0.047µF
100 kW
ILIM
U1
bq24735
R7
549 kW
Pack +
Pack -
L1
4.7µH
Q4
Sis412DN
C10
10µF
C11
10µF
+3.3V
R3
10 kW
R4
10 kW
R5
10 kW
LODRV
GND
SDA
HOST
SMBus
SCL
SRP
SRN
Dig I/O
ADC
R14
*
ACOK
IOUT
C13
0.1µF
10 Ω
PowerPad
C14
0.1µF
R15
*
C4
100 pF
7.5 Ω
Fs = 750kHz, IADPT = 2.816A, ICHRG = 1.984A, ILIM = 2.54A, VCHRG = 12.592V, 65W adapter and 3S2P battery pack
Use 0Ω for better current sensing accuracy, use 10Ω/7.5Ω resistor for reversed battery connection protection. See
application information about negative output voltage protection for hard shorts on battery to ground or battery
reversed connection.
The total Csys is the lump sum of system capacitance. It is not required by charger IC. Use Ri and Ci for adapter hot
plug-in voltage spike damping. See application information about input filter design.
Figure 2. Typical System Schematic with One NMOS Selector and Schottky Diode
Copyright © 2011, Texas Instruments Incorporated
Submit Documentation Feedback
3
Product Folder Link(s) :bq24735