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BQ24735 参数 Datasheet PDF下载

BQ24735图片预览
型号: BQ24735
PDF下载: 下载PDF文件 查看货源
内容描述: 1-4节锂电池SMBus充电控制器与N通道功率MOSFET选择支持睿频加速模式 [1-4 Cell Li Battery SMBus Charge Controller for Supporting Turbo Boost Mode with N-Channel Power MOSFET Selector]
分类和应用: 电池控制器
文件页数/大小: 42 页 / 1517 K
品牌: TI [ TEXAS INSTRUMENTS ]
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bq24735  
www.ti.com  
SLUSAK9 SEPTEMBER 2011  
ELECTRICAL CHARACTERISTICS (continued)  
4.5 V VVCC 24 V, 0°C TJ 125°C, typical values are at TA = 25°C, with respect to GND (unless otherwise noted)  
PARAMETER  
TEST CONDITIONS  
MIN  
TYP  
MAX UNIT  
ANALOG INPUT (ACDET, ILIM)  
IIN_ LEAK  
Input bias current  
V = 7 V  
1  
1
μA  
PWM OSCILLATOR  
FSW  
PWM switching frequency  
PWM increase frequency  
PWM decrease frequency  
ChargeOption () bit [9] = 0 (Default)  
ChargeOption() bit [10:9] = 11  
ChargeOption() bit [10:9] = 01  
600  
665  
465  
750  
885  
615  
900  
1100  
765  
kHz  
kHz  
kHz  
FSW+  
FSW  
BATFET GATE DRIVER (BATDRV)  
IBATFET  
BATDRV charge pump current limit  
40  
60  
µA  
VBATFET  
Gate drive voltage on BATFET  
VBATDRV - VSRN when VSRN > UVLO  
5.5  
6.1  
6.5  
7.4  
V
Minimum load resistance between  
BATDRV and SRN  
RBATDRV_LOAD  
RBATDRV_OFF  
500  
5
kΩ  
kΩ  
BATDRV turn-off resistance  
I = 30 µA  
6.2  
ACFET GATE DRIVER (ACDRV)  
IACFET  
ACDRV charge pump current limit  
40  
60  
μA  
VACFET  
Gate drive voltage on ACFET  
V
ACDRVVCMSRC when VVCC> UVLO  
5.5  
6.1  
6.5  
7.4  
V
Minimum load resistance between ACDRV  
and CMSRC  
RACDRV_LOAD  
RACDRV_OFF  
VACFET_LOW  
500  
5
kΩ  
kΩ  
V
ACDRV turn-off resistance  
I = 30 µA  
6.2  
5.9  
ACDRV Turn-Off when Vgs voltage is low  
(Specified by design)  
PWM HIGH SIDE DRIVER (HIDRV)  
RDS_HI_ON High side driver turn-on resistance  
RDS_HI_OFF  
V
V
V
BTST VPH = 5.5 V, I = 10 mA  
6
10  
Ω
Ω
High side driver turn-off resistance  
BTST VPH = 5.5 V, I = 10 mA  
0.65  
1.3  
Bootstrap refresh comparator threshold  
voltage  
BTST VPH when low side refresh pulse is requested  
VBTST_REFRESH  
3.85  
4.3  
4.7  
V
PWM LOW SIDE DRIVER (LODRV)  
RDS_LO_ON Low side driver turn-on resistance  
RDS_LO_OFF Low side driver turn-off resistance  
PWM DRIVER TIMING  
tLOW_HIGH Driver dead time from low side to high side  
tHIGH_LOW Driver dead time from high side to low side  
INTERNAL SOFT START  
ISTEP Soft start current step  
tSTEP Soft start current step time  
SMBus TIMING CHARACTERISTICS  
VREGN = 6 V, I = 10 mA  
VREGN = 6 V, I = 10 mA  
7.5  
0.9  
12  
Ω
Ω
1.4  
20  
20  
ns  
ns  
64  
mA  
In CCM mode 10mΩ current sensing resistor  
240  
μs  
tR  
SCLK/SDATA rise time  
1
300  
50  
μs  
ns  
μs  
μs  
μs  
μs  
ns  
ns  
µs  
μs  
kHz  
tF  
SCLK/SDATA fall time  
tW(H)  
SCLK pulse width high  
4
4.7  
4.7  
4
tW(L)  
SCLK Pulse Width Low  
Setup time for START condition  
tSU(STA)  
tH(STA)  
tSU(DAT)  
tH(DAT)  
tSU(STOP)  
t(BUF)  
FS(CL)  
START condition hold time after which first clock pulse is generated  
Data setup time  
250  
300  
4
Data hold time  
Setup time for STOP condition  
Bus free time between START and STOP condition  
Clock Frequency  
4.7  
10  
100  
Copyright © 2011, Texas Instruments Incorporated  
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