SBAS014A – MARCH 1992 – REVISED SEPTEMBER 2010
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ELECTRICAL CHARACTERISTICS (continued)
At T
A
= –40°C to +70°C, f
S
= 800kHz, +V
DIG
= +V
ANA
= +5V, –V
ANA
= –5V, using internal reference and the 50Ω input resistor
shown in
unless otherwise specified.
PARAMETER
DIGITAL OUTPUTS
Data format
Parallel 12 bits
Binary twos complement
Data coding
Leakage current
Output capacitance
DIGITAL TIMING
Bus access time
Bus relinquish time
POWER SUPPLIES
+V
DIG
=
+V
ANA
Specified
performance
–V
ANA
+I
DIG
+I
ANA
–I
ANA
Derated
performance
Power dissipation
TEMPERATURE RANGE
Specified performance
Derated performance
Storage
Thermal resistance
(q
JA
)
Plastic DIP
SOIC
–40
–55
–65
75
75
+70
+125
+150
–40
–55
–65
75
75
+70
+125
+150
°C
°C
°C
°C/W
°C/W
+V
DIG
=
+V
ANA
–V
ANA
f
S
= 800kHz
+4.5
–5.5
+4.75
–5.25
+5
–5
+16
+16
–13
+5
–5
225
+5.5
–4.5
275
+4.5
–5.5
+5.25
–4.75
+4.75
–5.25
+5
–5
+16
+16
–13
+5
–5
225
+5.5
–4.5
275
+5.25
–4.75
V
V
mA
mA
mA
V
V
mW
62
83
62
83
ns
ns
V
OL
V
OH
I
SINK
= 1.6mA
I
SOURCE
= 500mA
High-Z state, V
OUT
= 0V to V
DIG
High-Z state
+2.8
±5
15
+0.4
+2.8
±5
15
Parallel 12 bits
Binary twos complement
+0.4
V
V
mA
pF
TEST CONDITIONS
MIN
TYP
MAX
MIN
TYP
MAX
ADS7819UB
(1)
UNIT
4
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