SBAS014A – MARCH 1992 – REVISED SEPTEMBER 2010
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This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more
susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.
ORDERING INFORMATION
For the most current package and ordering information, see the Package Option Addendum located at the end of
this data sheet, or see the device product folder at
ABSOLUTE MAXIMUM RATINGS
(1)
Over operating free-air temperature range (unless otherwise noted).
ADS7810
Analog inputs: V
IN
AnalogREF
AnalogCAP
Ground voltage differences: DGND, AGND1, AGND2
+V
ANA
+V
DIG
to +V
ANA
+V
DIG
–V
ANA
Digital inputs
Maximum junction temperature
Internal power dissipation
(1)
±25
+V
ANA
+0.3 to AGND2 –0.3
Indefinite Short to AGND2
Momentary Short to +V
ANA
±0.3
+7
+0.3
+7
–7
–0.3 to +V
DIG
+0.3
+165
825
UNIT
V
V
V
V
V
V
V
V
V
°C
mW
Stresses beyond those listed under
Absolute Maximum Ratings
may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under
Recommended Operating
Conditions
is not implied. Exposure to absolute-maximum rated conditions for extended periods may affect device reliability.
2
Product Folder Link(s):
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